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1. |
EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that |
A. | more number of electron-hole pairs will be generated in silicon than in germanium at room temperature |
B. | less number of electron hole pairs will be generated in silicon than in germanium at room temperature |
C. | equal number of electron-hole pairs will be generated in both at lower temperatures |
D. | equal number of electron-hole pairs will be generated in both at higher temperatures |
Answer» C. equal number of electron-hole pairs will be generated in both at lower temperatures | |