1.

EG for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that

A. more number of electron-hole pairs will be generated in silicon than in germanium at room temperature
B. less number of electron hole pairs will be generated in silicon than in germanium at room temperature
C. equal number of electron-hole pairs will be generated in both at lower temperatures
D. equal number of electron-hole pairs will be generated in both at higher temperatures
Answer» C. equal number of electron-hole pairs will be generated in both at lower temperatures


Discussion

No Comment Found