MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 21 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
APDs do not operate at signal wavelengths between 1.3 and 1.6μm. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
_________________ APDs are recognized for their high gain-bandwidth products. |
| A. | GaAs |
| B. | Alloy-made |
| C. | Germanium |
| D. | Silicon |
| Answer» E. | |
| 3. |
__________ determines a higher transmission rate related to the gain of the APD device. |
| A. | Attenuation |
| B. | Gain-bandwidth product |
| C. | Dispersion mechanism |
| D. | Ionization coefficient |
| Answer» C. Dispersion mechanism | |
| 4. |
For silicon APDs, the value of excess noise factor is between _________ |
| A. | 0.001 and 0.002 |
| B. | 0.5 and 0.7 |
| C. | 0.02 and 0.10 |
| D. | 1 and 2 |
| Answer» D. 1 and 2 | |
| 5. |
____________ is dependent upon the detector material, the shape of the electric field profile within the device. |
| A. | SNR |
| B. | Excess avalanche noise factor |
| C. | Noise gradient |
| D. | Noise power |
| Answer» C. Noise gradient | |
| 6. |
______________ is used in the specification of optical detectors. |
| A. | Noise equivalent power |
| B. | Polarization |
| C. | Sensitivity |
| D. | Electron movement |
| Answer» B. Polarization | |
| 7. |
________________ is a combination of shunt capacitances and resistances. |
| A. | Attenuation |
| B. | Shunt impedance |
| C. | Shunt admittance |
| D. | Thermal capacitance |
| Answer» D. Thermal capacitance | |
| 8. |
In a silicon p-i-n photodiode, if load resistance is 4 kΩ, temperature is 293 K, bandwidth is 4MHz, find the thermal noise in the load resistor. |
| A. | 1.8 × 10-16A2 |
| B. | 1.23 × 10-17A2 |
| C. | 1.65 × 10-16A2 |
| D. | 1.61 × 10-17A2 |
| Answer» E. | |
| 9. |
A silicon p-i-n photodiode incorporated in an optical receiver has following parameters: Compute the photocurrent in the device. |
| A. | 67.7nA |
| B. | 81.2nA |
| C. | 68.35nA |
| D. | 46.1nAView Answer |
| Answer» B. 81.2nA | |
| 10. |
FOR_SILICON_APDS,_THE_VALUE_OF_EXCESS_NOISE_FACTOR_IS_BETWEEN__________?$ |
| A. | 0.001 and 0.002 |
| B. | 0.5 and 0.7 |
| C. | 0.02 and 0.10 |
| D. | 1 and 2 |
| Answer» D. 1 and 2 | |
| 11. |
_________________ APDs are recognized for their high gain-bandwidth products.$ |
| A. | GaAs |
| B. | Alloy-made |
| C. | Germanium |
| D. | Silicon |
| Answer» E. | |
| 12. |
__________ determines a higher transmission rate related to the gain of the APD device.$ |
| A. | Attenuation |
| B. | Gain-bandwidth product |
| C. | Dispersion mechanism |
| D. | Ionization coefficient |
| Answer» C. Dispersion mechanism | |
| 13. |
APDs do not operate at signal wavelengths between 1.3 and 1.6μm. State whether the given statement is true or false.$ |
| A. | True |
| B. | False |
| Answer» B. False | |
| 14. |
____________ is dependent upon the detector material, the shape of the electric field profile within the device? |
| A. | SNR |
| B. | Excess avalanche noise factor |
| C. | Noise gradient |
| D. | Noise power |
| Answer» C. Noise gradient | |
| 15. |
The internal gain mechanism in an APD is directly related to SNR. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 16. |
A photodiode has a capacitance of 6 pF. Calculate the maximum load resistance which allows an 8MHz post detection bandwidth. |
| A. | 3.9 kΩ |
| B. | 3.46 kΩ |
| C. | 3.12 kΩ |
| D. | 3.32 kΩ |
| Answer» E. | |
| 17. |
______________ is used in the specification of optical detectors |
| A. | Noise equivalent power |
| B. | Polarization |
| C. | Sensitivity |
| D. | Electron movement |
| Answer» B. Polarization | |
| 18. |
________________ is a combination of shunt capacitances and resistances |
| A. | Attenuation |
| B. | Shunt impedance |
| C. | Shunt admittance |
| D. | Thermal capacitance |
| Answer» D. Thermal capacitance | |
| 19. |
In a silicon p-i-n photodiode, if load resistance is 4 kΩ, temperature is 293 K, bandwidth is 4MHz, find the thermal noise in the load resistor$ |
| A. | 1.8√ó 10<sup>-16</sup>A<sup>2</sup> |
| B. | 1.23√ó 10<sup>-17</sup>A<sup>2</sup> |
| C. | 1.65√ó 10<sup>-16</sup>A<sup>2</sup> |
| D. | 1.61√ó 10<sup>-17</sup>A<sup>2</sup> |
| Answer» E. | |
| 20. |
The dominating effect of thermal noise over the shot noise in photodiodes without internal gain can be observed in wideband systems operating in the range of ________ |
| A. | 0.4 to 0.5 μm |
| B. | 0.8 to 0.9 μm |
| C. | 0.3 to 0.4 μm |
| D. | 0.7 to 0.79 μm |
| Answer» C. 0.3 to 0.4 ‚âà√≠¬¨‚à´m | |
| 21. |
Which are the two main sources of noise in photodiodes without internal gain? |
| A. | Gaussian noise and dark current noise |
| B. | Internal noise and external noise |
| C. | Dark current noise & Quantum noise |
| D. | Gaussian noise and Quantum noise |
| Answer» D. Gaussian noise and Quantum noise | |