MCQOPTIONS
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MCQOPTIONS
This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency. |
| A. | 0.198 |
| B. | 0.283 |
| C. | 0.366 |
| D. | 0.467 |
| Answer» B. 0.283 | |
| 2. |
A correct DH structure will restrict the vertical width of waveguide region is? |
| A. | 0.5μm. |
| B. | 0.69 μm |
| C. | 0.65 μm |
| D. | Less than 0.4 μm |
| Answer» E. | |
| 3. |
Single longitudinal mode operation is obtained by __________ |
| A. | Eliminating all transverse mode |
| B. | Eliminating all longitudinal modes |
| C. | Increasing the length of cavity |
| D. | Reducing the length of cavity |
| Answer» E. | |
| 4. |
The spectral width of emission from the single mode device is __________ |
| A. | Smaller than broadened transition line-width |
| B. | Larger than broadened transition line-width |
| C. | Equal the broadened transition line-width |
| D. | Cannot be determined |
| Answer» B. Larger than broadened transition line-width | |
| 5. |
Laser modes are generally separated by few __________ |
| A. | Tenths of micrometer |
| B. | Tenths of nanometer |
| C. | Tenths of Pico-meter |
| D. | Tenths of millimeter |
| Answer» C. Tenths of Pico-meter | |
| 6. |
Gain guided laser structure are __________ |
| A. | Chemical laser |
| B. | Gas laser |
| C. | DH injection laser |
| D. | Quantum well laser |
| Answer» D. Quantum well laser | |
| 7. |
A particular laser structure is designed so that the active region extends the edges of devices. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 8. |
ηT is known as slope quantum efficiency. |
| A. | True |
| B. | False |
| Answer» C. | |
| 9. |
Injection laser have a high threshold current density of __________ |
| A. | 104Acm-2 and more |
| B. | 102Acm-2 |
| C. | 10-2Acm-2 |
| D. | 10-3Acm-2 |
| Answer» B. 102Acm-2 | |
| 10. |
In semiconductor injection laser, narrow line bandwidth is of the order? |
| A. | 1 nm or less |
| B. | 4 nm |
| C. | 5 nm |
| D. | 3 nm |
| Answer» B. 4 nm | |
| 11. |
Stimulated emission by recombination of injected carriers is encouraged in __________ |
| A. | Semiconductor injection laser |
| B. | Gas laser |
| C. | Chemist laser |
| D. | Dye laser |
| Answer» B. Gas laser | |
| 12. |
THE_SPECTRAL_WIDTH_OF_EMISSION_FROM_THE_SINGLE_MODE_DEVICE_IS?$ |
| A. | Smaller than broadened transition line-width |
| B. | Larger than broadened transition line-width |
| C. | Equal the broadened transition line-width |
| D. | Cannot be determined |
| Answer» B. Larger than broadened transition line-width | |
| 13. |
Single longitudinal mode operation is obtained by$ |
| A. | Eliminating all transverse mode |
| B. | Eliminating all longitudinal modes |
| C. | Increasing the length of cavity |
| D. | Reducing the length of cavity |
| Answer» E. | |
| 14. |
The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency |
| A. | 0.198 |
| B. | 0.283 |
| C. | 0.366 |
| D. | 0.467 |
| Answer» B. 0.283 | |
| 15. |
Laser modes are generally separated by fe? |
| A. | Tenths of micrometer |
| B. | Tenths of nanometer |
| C. | Tenths of Pico-meter |
| D. | Tenths of millimeter |
| Answer» C. Tenths of Pico-meter | |
| 16. |
Gain guided laser structure are |
| A. | Chemical laser |
| B. | Gas laser |
| C. | DH injection laser |
| D. | Quantum well laser |
| Answer» D. Quantum well laser | |
| 17. |
A particular laser structure is designed so that the active region extends the edges of devices. State whether the following statement is true or false. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 18. |
In a DH laser, the sides of cavity are formed by _______________ |
| A. | Cutting the edges of device |
| B. | Roughening the edges of device |
| C. | Softening the edges of device |
| D. | Covering the sides with ceramics |
| Answer» C. Softening the edges of device | |
| 19. |
The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency. |
| A. | 7.8 % |
| B. | 10 % |
| C. | 12 % |
| D. | 6 % |
| Answer» B. 10 % | |
| 20. |
ηT Is known as slope quantum efficiency. State true or false$ |
| A. | True |
| B. | False |
| Answer» C. | |
| 21. |
Injection laser have a high threshold current density of |
| A. | 10<sup>4</sup>Acm<sup>-2</sup>and more |
| B. | 10<sup>2</sup>Acm<sup>-2</sup> |
| C. | 10<sup>-2</sup>Acm<sup>-2</sup> |
| D. | 10<sup>-3</sup>Acm<sup>-2</sup> |
| Answer» B. 10<sup>2</sup>Acm<sup>-2</sup> | |
| 22. |
In semiconductor injection laser, narrow line bandwidth is of the order |
| A. | 1 nm or less |
| B. | 4 nm |
| C. | 5 nm |
| D. | 3 nm |
| Answer» B. 4 nm | |
| 23. |
Stimulated emission by recombination of injected carriers is encouraged in |
| A. | Semiconductor injection laser |
| B. | Gas laser |
| C. | Chemist laser |
| D. | Dye laser |
| Answer» B. Gas laser | |