Explore topic-wise MCQs in Microwave Engineering.

This section includes 13 Mcqs, each offering curated multiple-choice questions to sharpen your Microwave Engineering knowledge and support exam preparation. Choose a topic below to get started.

1.

The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation

A. True
B. False
Answer» C.
Discussion
2.

HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in :

A. High power transmitters
B. High power receivers
C. RADAR
D. Smart antennas
Answer» B. High power receivers
Discussion
3.

A major disadvantage of high electron mobility transistor is that:

A. They have low gain
B. High manufacturing cost
C. Temperature sensitive
D. High driving voltage is required
Answer» C. Temperature sensitive
Discussion
4.

THE_SCATTERING_PARAMETER_S11_FOR_GAN_HELMT_INCREASES_WITH_INCREASE_IN_FREQUENCY_OF_OPERATION?$

A. True
B. False
Answer» C.
Discussion
5.

HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SUBSTRATE_CAN_BE_USED_IN_:?$

A. High power transmitters
B. High power receivers
C. RADAR
D. Smart antennas
Answer» B. High power receivers
Discussion
6.

A major disadvantage of high electron mobility transistor is that?

A. They have low gain
B. High manufacturing cost
C. Temperature sensitive
D. High driving voltage is required
Answer» C. Temperature sensitive
Discussion
7.

Since multiple layers of semiconductor materials is used in high electron mobility transistors, this results in:

A. High gain
B. Power loss
C. Temperature sensitivity
D. Thermal stress
Answer» E.
Discussion
8.

High drain current at RF levels is achieved with the biasing and decoupling circuitry for a dual polarity supply.

A. True
B. False
Answer» B. False
Discussion
9.

High-power circuits generally use higher values of:

A. Gate to source current
B. Drain to source current
C. Drain current
D. Gate to source voltage
Answer» D. Gate to source voltage
Discussion
10.

The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied.

A. True
B. False
Answer» C.
Discussion
11.

High electron mobility transistors can be constructed with the use of single semiconductor material like GaAs that have high electron mobility.

A. True
B. False
Answer» C.
Discussion
12.

MOSFETs can provide a power of several hundred watts when the devices are packaged in:

A. Series
B. Parallel
C. Diagonal
D. None of the mentioned
Answer» C. Diagonal
Discussion
13.

There exists no difference between the construction of GaAs MESFET and silicon MOSFET except for the material used in their construction.

A. True
B. False
Answer» C.
Discussion