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The scattering parameter S11 for GaN HELMT increa..
1.
The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation
A.
True
B.
False
Answer» C.
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The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation
HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in :
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THE_SCATTERING_PARAMETER_S<SUB>11</SUB>_FOR_GAN_HELMT_INCREASES_WITH_INCREASE_IN_FREQUENCY_OF_OPERATION?$
HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SUBSTRATE_CAN_BE_USED_IN_:?$
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