HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SU – McqOptions

MCQOPTIONS

1.	HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SUBSTRATE_CAN_BE_USED_IN_:?$
A.	High power transmitters
B.	High power receivers
C.	RADAR
D.	Smart antennas
Answer» B. High power receivers

Discussion

No Comment Found

Related MCQs

The scattering parameter S11 for GaN HELMT increases with increase in frequency of operation
HEMT fabricated using GaN and aluminum gallium nitride on a silicon substrate can be used in :
A major disadvantage of high electron mobility transistor is that:
THE_SCATTERING_PARAMETER_S<SUB>11</SUB>_FOR_GAN_HELMT_INCREASES_WITH_INCREASE_IN_FREQUENCY_OF_OPERATION?$
HEMT_FABRICATED_USING_GAN_AND_ALUMINUM_GALLIUM_NITRIDE_ON_A_SILICON_SUBSTRATE_CAN_BE_USED_IN_:?$
A major disadvantage of high electron mobility transistor is that?
Since multiple layers of semiconductor materials is used in high electron mobility transistors, this results in:
High drain current at RF levels is achieved with the biasing and decoupling circuitry for a dual polarity supply.
High-power circuits generally use higher values of:
The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied.