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This section includes 18 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
1. |
If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as: |
A. | Logic input 1 |
B. | Uncertain |
C. | Logic input 0 |
D. | None of the mentioned |
Answer» B. Uncertain | |
2. |
The following graph is a spectrum of which noise: |
A. | Thermal noise |
B. | Gaussian Noise |
C. | Flicker noise |
D. | None of the mentioned |
Answer» E. | |
3. |
In the following graph the fc is called as: |
A. | Cutoff frequency |
B. | Threshold frequency |
C. | Corner frequency |
D. | None of the mentioned |
Answer» D. None of the mentioned | |
4. |
The average power of flicker noise depends on: |
A. | Thickness of oxide |
B. | Cleanness of the oxide silicon interface |
C. | Voltage on oxide |
D. | Length of channel |
Answer» C. Voltage on oxide | |
5. |
Flicker noise originates due to: |
A. | Conduction in channel |
B. | Drain to Source voltage |
C. | Reduction in channel length |
D. | Dangling bonds |
Answer» E. | |
6. |
In probability Noise is described as: |
A. | Random function |
B. | Random process |
C. | Deterministic function |
D. | Deterministic process |
Answer» C. Deterministic function | |
7. |
THE_AVERAGE_POWER_OF_FLICKER_NOISE_DEPENDS_ON:?$ |
A. | Thickness of oxide |
B. | Cleanness of the oxide silicon interface |
C. | Voltage on oxide |
D. | Length of channel |
Answer» C. Voltage on oxide | |
8. |
Input Voltage between VIH and VOH is considered as: |
A. | Logic Input 1 |
B. | Logic Input 0 |
C. | Uncertain |
D. | None of the mentioned |
Answer» B. Logic Input 0 | |
9. |
If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as : |
A. | Logic input 1 |
B. | Uncertain |
C. | Logic input 0 |
D. | None of the mentioned |
Answer» B. Uncertain | |
10. |
Flicker noise originate due to? |
A. | Conduction in channel |
B. | Drain to Source voltage |
C. | Reduction in channel length |
D. | Dangling bonds |
Answer» E. | |
11. |
Flicker noise is found in MOSFET at: |
A. | Gate and oxide interface |
B. | Gate oxide and silicon interface |
C. | Source and substrate interface |
D. | Drain and substrate interface |
Answer» C. Source and substrate interface | |
12. |
Thermal noise current in the MOSFET is proportional to: |
A. | Transconductance |
B. | Resistance |
C. | Gate voltage |
D. | None of the mentioned |
Answer» B. Resistance | |
13. |
Thermal noise is generated from MOSFET by: |
A. | Conduction of charge carriers in the channel |
B. | Electric field across the gate and channel |
C. | Capacitance of the gate oxide |
D. | Substrate bias effect |
Answer» B. Electric field across the gate and channel | |
14. |
Thermal noise is generated from: |
A. | Resistor |
B. | Capacitor |
C. | Inductor |
D. | All of the mentioned |
Answer» B. Capacitor | |
15. |
The 2 types of noise that the analog systems face during signal processing are: |
A. | Device electronic noise and environmental noise |
B. | Noise due to Vibration and electronic noise |
C. | Passive and active noise |
D. | None of the mentioned |
Answer» B. Noise due to Vibration and electronic noise | |
16. |
Noise generated by independent devices are: |
A. | Correlated |
B. | Uncorrelated |
C. | Equal |
D. | None of the mentioned |
Answer» C. Equal | |
17. |
In probability Noise is described as : |
A. | Random function |
B. | Random process |
C. | Deterministic function |
D. | Deterministic process |
Answer» C. Deterministic function | |
18. |
Noise in VLSI circuits mean: |
A. | Unwanted signals that arise due to vibration in the passive circuits |
B. | Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality |
C. | Signal which undergoes distortion |
D. | All of the mentioned |
Answer» C. Signal which undergoes distortion | |