Explore topic-wise MCQs in Vlsi.

This section includes 18 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:

A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned
Answer» B. Uncertain
2.

The following graph is a spectrum of which noise:

A. Thermal noise
B. Gaussian Noise
C. Flicker noise
D. None of the mentioned
Answer» E.
3.

In the following graph the fc is called as:

A. Cutoff frequency
B. Threshold frequency
C. Corner frequency
D. None of the mentioned
Answer» D. None of the mentioned
4.

The average power of flicker noise depends on:

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel
Answer» C. Voltage on oxide
5.

Flicker noise originates due to:

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in channel length
D. Dangling bonds
Answer» E.
6.

In probability Noise is described as:

A. Random function
B. Random process
C. Deterministic function
D. Deterministic process
Answer» C. Deterministic function
7.

THE_AVERAGE_POWER_OF_FLICKER_NOISE_DEPENDS_ON:?$

A. Thickness of oxide
B. Cleanness of the oxide silicon interface
C. Voltage on oxide
D. Length of channel
Answer» C. Voltage on oxide
8.

Input Voltage between VIH and VOH is considered as:

A. Logic Input 1
B. Logic Input 0
C. Uncertain
D. None of the mentioned
Answer» B. Logic Input 0
9.

If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as :

A. Logic input 1
B. Uncertain
C. Logic input 0
D. None of the mentioned
Answer» B. Uncertain
10.

Flicker noise originate due to?

A. Conduction in channel
B. Drain to Source voltage
C. Reduction in channel length
D. Dangling bonds
Answer» E.
11.

Flicker noise is found in MOSFET at:

A. Gate and oxide interface
B. Gate oxide and silicon interface
C. Source and substrate interface
D. Drain and substrate interface
Answer» C. Source and substrate interface
12.

Thermal noise current in the MOSFET is proportional to:

A. Transconductance
B. Resistance
C. Gate voltage
D. None of the mentioned
Answer» B. Resistance
13.

Thermal noise is generated from MOSFET by:

A. Conduction of charge carriers in the channel
B. Electric field across the gate and channel
C. Capacitance of the gate oxide
D. Substrate bias effect
Answer» B. Electric field across the gate and channel
14.

Thermal noise is generated from:

A. Resistor
B. Capacitor
C. Inductor
D. All of the mentioned
Answer» B. Capacitor
15.

The 2 types of noise that the analog systems face during signal processing are:

A. Device electronic noise and environmental noise
B. Noise due to Vibration and electronic noise
C. Passive and active noise
D. None of the mentioned
Answer» B. Noise due to Vibration and electronic noise
16.

Noise generated by independent devices are:

A. Correlated
B. Uncorrelated
C. Equal
D. None of the mentioned
Answer» C. Equal
17.

In probability Noise is described as :

A. Random function
B. Random process
C. Deterministic function
D. Deterministic process
Answer» C. Deterministic function
18.

Noise in VLSI circuits mean:

A. Unwanted signals that arise due to vibration in the passive circuits
B. Unknown signal that limits the minimum signal level that a circuit can process with acceptable quality
C. Signal which undergoes distortion
D. All of the mentioned
Answer» C. Signal which undergoes distortion