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This section includes 26 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
If a particular optical power is coupled from an incoherent LED into a low-NA fiber, the device must exhibit very high radiance. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
Determine coupling efficiency into the fiber when GaAs LED is in close proximity to fiber core having numerical aperture of 0.3. |
| A. | 0.9 |
| B. | 0.3 |
| C. | 0.6 |
| D. | 0.12 |
| Answer» B. 0.3 | |
| 3. |
In a GaAs LED, compute the loss relative to internally generated optical power in the fiber when there is small air gap between LED and fiber core. (Fiber coupled = 5.5 * 10-4Pint) |
| A. | 34 dB |
| B. | 32.59 dB |
| C. | 42 dB |
| D. | 33.1 dB |
| Answer» C. 42 dB | |
| 4. |
For a GaAs LED, the coupling efficiency is 0.05. Compute the optical loss in decibels. |
| A. | 12.3 dB |
| B. | 14 dB |
| C. | 13.01 dB |
| D. | 14.6 dB |
| Answer» D. 14.6 dB | |
| 5. |
A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency. |
| A. | 0.18% |
| B. | 0.32% |
| C. | 0.65% |
| D. | 0.9% |
| Answer» E. | |
| 6. |
A planar LED fabricated from GaAs has a refractive index of 2.5. Compute the optical power emitted when transmission factor is 0.68. |
| A. | 3.4 % |
| B. | 1.23 % |
| C. | 2.72 % |
| D. | 3.62 % |
| Answer» D. 3.62 % | |
| 7. |
The Lambertian intensity distribution __________ the external power efficiency by some percent. |
| A. | Reduces |
| B. | Does not affects |
| C. | Increases |
| D. | Have a negligible effect |
| Answer» B. Does not affects | |
| 8. |
Compute power internally generated within a double-heterojunction LED if it has internal quantum efficiency of 64.5 % and drive current of 40 mA with a peak emission wavelength of 0.82 μm. |
| A. | 0.09 |
| B. | 0.039 |
| C. | 0.04 |
| D. | 0.06 |
| Answer» C. 0.04 | |
| 9. |
In a junction diode, an equilibrium condition occurs when ____________ |
| A. | Δngreater than Δp |
| B. | Δnsmaller than Δp |
| C. | Constant current flow |
| D. | Optical amplification through stimulated emission |
| Answer» D. Optical amplification through stimulated emission | |
| 10. |
The carrier recombination lifetime becomes majority or injected carrier lifetime. |
| A. | True |
| B. | False |
| Answer» C. | |
| 11. |
The excess density of electrons Δnand holes Δpin an LED is ____________ |
| A. | Equal |
| B. | Δpmore than Δn |
| C. | Δn more than Δp |
| D. | Does not affects the LED |
| Answer» B. Δpmore than Δn | |
| 12. |
THE_LAMBERTIAN_INTENSITY_DISTRIBUTION____________THE_EXTERNAL_POWER_EFFICIENCY_BY_SOME_PERCENT.?$ |
| A. | Reduces |
| B. | Does not affects |
| C. | Increases |
| D. | Have a negligible effect |
| Answer» B. Does not affects | |
| 13. |
A planar LED is fabricated from GaAs is having a optical power emitted is 0.018% of optical power generated internally which is 0.018% of optical power generated internally which is 0.6 P. Determine external power efficiency.$ |
| A. | 0.18% |
| B. | 0.32% |
| C. | 0.65% |
| D. | 0.9% |
| Answer» E. | |
| 14. |
A_planar_LED_fabricated_from_GaAs_has_a_refractive_index_of_2.5._Compute_the_optical_power_emitted_when_transmission_factor_is_0.68.$ |
| A. | 3.4 % |
| B. | 1.23 % |
| C. | 2.72 % |
| D. | 3.62 % |
| Answer» D. 3.62 % | |
| 15. |
If a particular optical power is coupled from an incoherent LED into a low-NA fiber, the device must exhibit very high radiance . State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 16. |
Determine coupling efficiency into the fiber when GaAs LED is in close proximity to fiber core having numerical aperture of 0.3 |
| A. | 0.9 |
| B. | 0.3 |
| C. | 0.6 |
| D. | 0.12 |
| Answer» B. 0.3 | |
| 17. |
In a GaAs LED, compute the loss relative to internally generated optical power in the fiber when there is small air gap between LED and fiber core. (Fiber coupled = 5.5 * 10-4Pint) |
| A. | 34 dB |
| B. | 32.59 dB |
| C. | 42 dB |
| D. | 33.1 dB |
| Answer» C. 42 dB | |
| 18. |
For_a_GaAs_LED,_the_coupling_efficiency_is_0.05._Compute_the_optical_loss_in_decibels. |
| A. | 12.3 dB |
| B. | 14 dB |
| C. | 13.01 dB |
| D. | 14.6 dB |
| Answer» D. 14.6 dB | |
| 19. |
Compute power internally generated within a double-heterojunction LED if it has internal quantum efficiency of 64.5 % and drive current of 40 mA with a peak emission wavelength of 0.82 μm?# |
| A. | 0.09 |
| B. | 0.039 |
| C. | 0.04 |
| D. | 0.06 |
| Answer» C. 0.04 | |
| 20. |
Determine the internal quantum efficiency generated within a device when it has a radiative recombination lifetime of 80 ns and total carrier recombination lifetime of 40 ns. |
| A. | 20 % |
| B. | 80 % |
| C. | 30 % |
| D. | 40 % |
| Answer» C. 30 % | |
| 21. |
Determine the total carrier recombination lifetime of a double heterojunction LED where the radioactive and nonradioactive recombination lifetime of minority carriers in active region are 70 ns and 100 ns respectively. |
| A. | 41.17 ns |
| B. | 35 ns |
| C. | 40 ns |
| D. | 37.5 ns |
| Answer» B. 35 ns | |
| 22. |
In a junction diode, an equilibrium condition occurs when |
| A. | Δngreater than Δp |
| B. | Δnsmaller than Δp |
| C. | Constant current flow |
| D. | Optical amplification through stimulated emission |
| Answer» D. Optical amplification through stimulated emission | |
| 23. |
The carrier recombination lifetime becomes majority or injected carrier lifetime. State whether the given statement is true or false. |
| A. | True |
| B. | False |
| Answer» C. | |
| 24. |
The hole concentration in extrinsic materials is _________ electron concentration. |
| A. | much greater than |
| B. | lesser than |
| C. | equal to |
| D. | negligible difference with |
| Answer» B. lesser than | |
| 25. |
The excess density of electrons Δnand holes Δpin an LED is$ |
| A. | Equal |
| B. | Δpmore than Δn |
| C. | Δn more than Δp |
| D. | Does not affects the LED |
| Answer» B. ‚âà√≠‚àö√Üpmore than ‚âà√≠‚àö√Ün | |
| 26. |
The absence of _______________ in LEDs limits the internal quantum efficiency. |
| A. | Proper semiconductor |
| B. | Adequate power supply |
| C. | Optical amplification through stimulated emission |
| D. | Optical amplification through spontaneous emission |
| Answer» D. Optical amplification through spontaneous emission | |