Explore topic-wise MCQs in Vlsi.

This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

MOSFET is used as ___________

A. current source
B. voltage source
C. buffer
D. divider
Answer» B. voltage source
2.

When the threshold voltage is more, leakage current will be?

A. more
B. less
C. all of the mentioned
D. none of the mentioned
Answer» C. all of the mentioned
3.

When the channel pinches off?

A. Vgs > Vds
B. Vds > Vgs
C. Vds > (Vgs-Vth)
D. Vgs > (Vds-Vth)
Answer» D. Vgs > (Vds-Vth)
4.

In linear region ______ channel exists.

A. uniform
B. non-uniform
C. wide
D. uniform and wide
Answer» B. non-uniform
5.

The current Ids _______ as Vds increases.

A. increases
B. decreases
C. remains fairly constant
D. exponentially increases
Answer» D. exponentially increases
6.

Threshold voltage is negative for __________

A. nMOS depletion
B. nMOS enhancement
C. pMOS depletion
D. pMOS enhancement
Answer» B. nMOS enhancement
7.

What is the condition for saturation?

A. Vgs = Vds
B. Vds = Vgs Vt
C. Vgs = Vds Vt
D. Vds > Vgs Vt
Answer» C. Vgs = Vds Vt
8.

In resistive region __________

A. Vds greater than (Vgs Vt)
B. Vds lesser than (Vgs Vt)
C. Vgs greater than (Vds Vt)
D. Vgs lesser than (Vds Vt)
Answer» C. Vgs greater than (Vds Vt)
9.

What is the mobility of proton or hole at room temperature?

A. 650 cm<sup>2</sup>/V sec
B. 260 cm<sup>2</sup>/V sec
C. 240 cm<sup>2</sup>/V sec
D. 500 cm<sup>2</sup>/V sec
Answer» D. 500 cm<sup>2</sup>/V sec
10.

Eds is given by __________

A. Vds / L
B. L / Vds
C. Vds x L
D. Vdd / L
Answer» B. L / Vds
11.

Velocity can be given as __________

A. / Vds
B. / Eds
C. x Eds
D. Eds /
Answer» C. x Eds
12.

Transit time can be given by __________

A. L / v
B. v / L
C. v x L
D. v x d
Answer» B. v / L
13.

Ids can be given by __________

A. Qc x
B. Qc /
C. / Qc
D. Qc / 2
Answer» C. / Qc
14.

Ids depends on ___________

A. Vg
B. Vds
C. Vdd
D. Vss
Answer» C. Vdd