MCQOPTIONS
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MCQOPTIONS
This section includes 72 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway. |
| A. | positive |
| B. | negative |
| C. | zero |
| D. | None of the above |
| Answer» B. negative | |
| 2. |
In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region. |
| A. | depletion, enhancement |
| B. | enhancement, enhancement |
| C. | enhancement, depletion |
| D. | None of the above |
| Answer» D. None of the above | |
| 3. |
The silicon dioxide (SiO2) layer used in a MOSFET is ________. |
| A. | an insulator |
| B. | a conductor |
| C. | a semiconductor |
| D. | None of the above |
| Answer» B. a conductor | |
| 4. |
The FET resistance in the ohmic region is ________ at VP and ________ at the origin. |
| A. | smallest, largest |
| B. | largest, smallest |
| C. | larger, smaller |
| D. | smaller, larger |
| Answer» C. larger, smaller | |
| 5. |
________ has high input impedance, fast switching speeds, and lower operating power levels. |
| A. | CMOS |
| B. | FET |
| C. | BJT |
| D. | None of the above |
| Answer» B. FET | |
| 6. |
The specification sheet provides ________ to calculate the value of k for enhancement-type MOSFETs. |
| A. | VGS(on) |
| B. | ID(on) |
| C. | VGS(Th) |
| D. | All of the above |
| Answer» E. | |
| 7. |
The enhancement-type MOSFET is in the cutoff region if ________. |
| A. | applied VGS is larger than VGS(Th) |
| B. | applied VGS is less than or equal to VGS(Th) |
| C. | VGS has a positive level |
| D. | None of the above |
| Answer» C. VGS has a positive level | |
| 8. |
In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS. |
| A. | higher, more |
| B. | higher, less |
| C. | lower, lower |
| D. | None of the above |
| Answer» B. higher, less | |
| 9. |
The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT. |
| A. | VDD |
| B. | VDS |
| C. | VGS |
| D. | VDG |
| Answer» D. VDG | |
| 10. |
The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________. |
| A. | the size of the transistor |
| B. | the absence of the channel |
| C. | the reverse bias junction |
| D. | All of the above |
| Answer» C. the reverse bias junction | |
| 11. |
The primary difference between the construction of a MOSFET and an FET is the ________. |
| A. | construction of the gate connection |
| B. | low input impedance |
| C. | threshold voltage |
| D. | None of the above |
| Answer» B. low input impedance | |
| 12. |
In an FET circuit, ________ is normally the parameter to be determined first. |
| A. | VGS |
| B. | VDS |
| C. | VDG |
| D. | ID |
| Answer» B. VDS | |
| 13. |
In a curve tracer, the ________ reveals the distance between the VGS curves for the n-channel device. |
| A. | vertical sens. |
| B. | horizontal sens. |
| C. | Per step |
| D. | gm |
| Answer» D. gm | |
| 14. |
A(n) ________ can be used to check the condition of an FET. |
| A. | digital display meter (DDM) |
| B. | ohmmeter (VOM) |
| C. | curve tracer |
| D. | All of the above |
| Answer» D. All of the above | |
| 15. |
The active region of an FET is bounded by ________. |
| A. | ohmic region |
| B. | cutoff region |
| C. | power line |
| D. | All of the above |
| Answer» E. | |
| 16. |
The transfer curve can be obtained by ________. |
| A. | using Shockley's equation |
| B. | using both Shockley's equation and by output characteristics |
| C. | characteristics |
| D. | None of the above |
| Answer» C. characteristics | |
| 17. |
As VGS becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level. |
| A. | less, more |
| B. | more, less |
| C. | more, more |
| D. | None of the above |
| Answer» D. None of the above | |
| 18. |
The region to the right of the pinch-off locus is commonly referred to as the ________ region. |
| A. | constant-current |
| B. | saturation |
| C. | linear amplification |
| D. | All of the above |
| Answer» E. | |
| 19. |
The pinch-off voltage continues to drop in a ________ manner as VGS becomes more and more negative. |
| A. | linear |
| B. | parabolic |
| C. | cubic |
| D. | None of the above |
| Answer» C. cubic | |
| 20. |
In the n-channel transistor, the drain and source are connected to the ________ channel while the gate is connected to the two layers of ________ material. |
| A. | p-type, n-type |
| B. | p-type, p-type |
| C. | n-type, p-type |
| D. | n-type, n-type |
| Answer» D. n-type, n-type | |
| 21. |
In an FET transistor, the depletion region is ________ near the top of both p-type materials. |
| A. | wider |
| B. | narrower |
| C. | the same as the rest of the depletion region |
| D. | None of the above |
| Answer» B. narrower | |
| 22. |
The ________ transistor has become one of the most important devices used in the design and construction of integrated circuits for digital computers. |
| A. | MOSFET |
| B. | BJT |
| C. | JFET |
| D. | None of the above |
| Answer» B. BJT | |
| 23. |
One of the most important characteristics of the FET is its ________ impedance. |
| A. | low input |
| B. | medium input |
| C. | high input |
| D. | None of the above |
| Answer» D. None of the above | |
| 24. |
A junction field-effect transistor (JFET) is a ________ device. |
| A. | current-controlled |
| B. | voltage-controlled |
| C. | voltage-current controlled |
| D. | None of the above |
| Answer» C. voltage-current controlled | |
| 25. |
The FET is a ________ device depending solely on either electron (n-channel) or hole (p-channel) conduction. |
| A. | unipolar |
| B. | bipolar |
| C. | tripolar |
| D. | None of the above |
| Answer» B. bipolar | |
| 26. |
Refer to the following figure. Calculate VGS at ID = 8 mA for k = 0.278 × 10–2 A/V2. |
| A. | 3.70 V |
| B. | 5.36 V |
| C. | 7.36 V |
| D. | 2.36 V |
| Answer» B. 5.36 V | |
| 27. |
Refer to the following curves. Calculate ID at VGS = 1 V. |
| A. | 8.167 mA |
| B. | 4.167 mA |
| C. | 6.167 mA |
| D. | 0.616 mA |
| Answer» C. 6.167 mA | |
| 28. |
Referring to the following transfer curve, determine the level of VGS when the drain current is 20 mA. |
| A. | 1.66 V |
| B. | –1.66 V |
| C. | 0.66 V |
| D. | –0.66 V |
| Answer» B. –1.66 V | |
| 29. |
What is the ratio of ID / IDSS for VGS = 0.5 VP? |
| A. | 0.25 |
| B. | 0.5 |
| C. | 1 |
| D. | 0 |
| Answer» B. 0.5 | |
| 30. |
Referring to this transfer curve, determine ID at VGS = 2 V. |
| A. | 0.444 mA |
| B. | 1.333 mA |
| C. | 0.111 mA |
| D. | 4.444 mA |
| Answer» B. 1.333 mA | |
| 31. |
Referring to this transfer curve. Calculate (using Shockley's equation) VGS at ID = 4mA. |
| A. | 2.54 V |
| B. | –2.54 V |
| C. | –12 V |
| D. | Undefined |
| Answer» C. –12 V | |
| 32. |
The level of VGS that results in ID = 0 mA is defined by VGS = ________. |
| A. | VGS(off) |
| B. | VP |
| C. | VDS |
| D. | None of the above |
| Answer» C. VDS | |
| 33. |
What is the level of drain current ID for gate-to-source voltages VGS less than (more negative than) the pinch-off level? |
| A. | zero amperes |
| B. | IDSS |
| C. | Negative value |
| D. | Undefined |
| Answer» B. IDSS | |
| 34. |
Refer to the following characteristic curve. Calculate the resistance of the FET at VGS = –0.25 V if ro = 10 k. |
| A. | 1.1378 k |
| B. | 113.78 |
| C. | 11.378 |
| D. | 11.378 k |
| Answer» E. | |
| 35. |
At which of the following is the level of VDS equal to the pinch-off voltage? |
| A. | When ID becomes equal to IDSS |
| B. | When VGS is zero volts |
| C. | IG is zero |
| D. | All of the above |
| Answer» E. | |
| 36. |
What is the level of IG in an FET? |
| A. | Zero amperes |
| B. | Equal to ID |
| C. | Depends on VDS |
| D. | Undefined |
| Answer» B. Equal to ID | |
| 37. |
Which of the following controls the level of ID? |
| A. | VGS |
| B. | VDS |
| C. | IG |
| D. | VDG |
| Answer» B. VDS | |
| 38. |
Which of the following is (are) not an FET? |
| A. | n -channel |
| B. | p -channel |
| C. | p-n channel |
| D. | n -channel and p -channel |
| Answer» D. n -channel and p -channel | |
| 39. |
Refer to the following characteristic curve. Calculate the resistance of the FET at V GS = –0.25 V if r o = 10 k . |
| A. | 1.1378 k |
| B. | 113.78 |
| C. | 11.378 |
| D. | 11.378 k |
| Answer» E. | |
| 40. |
Hand-held instruments are available to measure ________ for the BJT. |
| A. | dc |
| B. | I DSS |
| C. | V P |
| D. | All of the above |
| Answer» B. I DSS | |
| 41. |
Which of the following input impedances is not valid for a JFET? |
| A. | 10 10 |
| B. | 10 9 |
| C. | 10 8 |
| D. | 10 11 |
| Answer» D. 10 11 | |
| 42. |
Which of the following is (are) the advantage(s) of VMOS over MOSFETs? |
| A. | Reduced channel resistance |
| B. | Higher current and power ratings |
| C. | Faster switching time |
| D. | All of the above |
| Answer» E. | |
| 43. |
Which of the following represent(s) the cutoff region for an FET? |
| A. | I D = 0 mA |
| B. | V GS = V P |
| C. | I G = 0 |
| D. | All of the above |
| Answer» E. | |
| 44. |
Which of the following applies to MOSFETs? |
| A. | No direct electrical connection between the gate terminal and the channel |
| B. | Desirable high input impedance |
| C. | Uses metal for the gate, drain, and source connections |
| D. | All of the above |
| Answer» E. | |
| 45. |
At which of the following is the level of V DS equal to the pinch-off voltage? |
| A. | When I D becomes equal to I DSS |
| B. | When V GS is zero volts |
| C. | I G is zero |
| D. | All of the above |
| Answer» E. | |
| 46. |
Which of the following FETs has the lowest input impedance? |
| A. | JFET |
| B. | MOSFET depletion-type |
| C. | MOSFET enhancement-type |
| D. | None of the above |
| Answer» B. MOSFET depletion-type | |
| 47. |
The level of V GS that results in I D = 0 mA is defined by V GS = ________. |
| A. | V GS(off) |
| B. | V P |
| C. | V DS |
| D. | None of the above |
| Answer» C. V DS | |
| 48. |
Refer to the following figure. Calculate V GS at I D = 8 mA for k = 0.278 × 10 –2 A/V 2 . |
| A. | 3.70 V |
| B. | 5.36 V |
| C. | 7.36 V |
| D. | 2.36 V |
| Answer» B. 5.36 V | |
| 49. |
How many terminals can a MOSFET have? |
| A. | 2 |
| B. | 3 |
| C. | 4 |
| D. | 3 or 4 |
| Answer» E. | |
| 50. |
A BJT is a ________-controlled device. The JFET is a ________ - controlled device. |
| A. | voltage, voltage |
| B. | voltage, current |
| C. | current, voltage |
| D. | current, current |
| Answer» D. current, current | |