In an n-channel enhancement-type MOSFET with a fixed value of VT, the – McqOptions

MCQOPTIONS

1.	In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.
A.	higher, more
B.	higher, less
C.	lower, lower
D.	None of the above
Answer» B. higher, less

Discussion

No Comment Found

Related MCQs

VMOS FETs have a ________ temperature coefficient that will combat the possibility of thermal runaway.
In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of ID referred to as the ________ region.
The silicon dioxide (SiO2) layer used in a MOSFET is ________.
The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
________ has high input impedance, fast switching speeds, and lower operating power levels.
The specification sheet provides ________ to calculate the value of k for enhancement-type MOSFETs.
The enhancement-type MOSFET is in the cutoff region if ________.
In an n-channel enhancement-type MOSFET with a fixed value of VT, the ________ the level of VGS, the ________ the saturation level for VDS.
The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage VT.
The primary difference between the construction of depletion-type and enhancement-type MOSFETs is ________.