MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Engineering (MCQ) questions & answers knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Which among the below mentioned implementation strategies is/are precise to obtain an AC equivalent circuit of MOSFET?A. Replacement of all capacitors by open circuitsB. Replacement of all capacitors by short circuitsC. Setting of all DC voltages to zeroD. Setting of all DC voltages to unity |
| A. | A & C |
| B. | B & C |
| C. | B & D |
| D. | A & D |
| Answer» C. B & D | |
| 2. |
What should be the value of transconductance, if N-channel E-MOSFET is biased in saturation region with the conduction parameter (k) = 0.836 mA/ V and drain current (I) = 1.5 mA? |
| A. | 1 mA/V |
| B. | 1.5 mA/V |
| C. | 2.23 mA/V |
| D. | 4.23 mA/V |
| Answer» D. 4.23 mA/V | |
| 3. |
What would happen if 180 phase shifted signal between input voltage (Vi) and drain-to-source voltage (V) will be passed through the output coupling capacitor during the operation of MOSFET as an amplifier? |
| A. | DC value will be reduced to unity |
| B. | DC value will be reduced to zero |
| C. | DC value will be reduced to infinity |
| D. | None of the above |
| Answer» C. DC value will be reduced to infinity | |
| 4. |
Which among the below stated consequences occur in the negative half-cycle during the operation of MOSFET as an amplifier? |
| A. | Variation in V |
| B. | Variation in I |
| C. | Variation in voltage drop I |
| D. | All of the above |
| Answer» E. | |
| 5. |
The output signal generated corresponding to the magnified input signal by a linear amplifier is _________A. Larger in size B. Smaller in size C. Similar in shape as that of input signalD. Different in shape as that of input signal |
| A. | A & C |
| B. | B & D |
| C. | B & C |
| D. | A & D |
| Answer» B. B & D | |
| 6. |
Which type of breakdown can be prevented by adopting a reverse-biasedgate protecting diode on input side of MOSFET? |
| A. | Avalanche breakdown |
| B. | Punch through breakdown |
| C. | Snapback breakdown |
| D. | Static Charge Breakdown |
| Answer» E. | |
| 7. |
Which is/are the major drawback/s of including an additionaln__drift layer in a typical n-p-n bipolar power transistor? |
| A. | Increase in on-state device resistance by increasing on-state power loss |
| B. | Increase in on-state device resistance by decreasing on-state power loss |
| C. | Increase in on-state device resistance by completely stabilizing the level of on-state power loss |
| D. | All of the above |
| Answer» B. Increase in on-state device resistance by decreasing on-state power loss | |
| 8. |
On which factor does the current gain ( ) of power transistor depend? |
| A. | Thickness of emitter |
| B. | Thickness of base |
| C. | Thickness of collector |
| D. | All of the above |
| Answer» C. Thickness of collector | |
| 9. |
The breakdown voltage V or V in power transistor is the maximum voltage between collector and emitter with _________ |
| A. | Open circuited collector |
| B. | Open circuited base |
| C. | Base to emitter voltage that is adjusted to a specific negative value |
| D. | Base to emitter voltage that is adjusted to a specific positive value |
| Answer» D. Base to emitter voltage that is adjusted to a specific positive value | |
| 10. |
Which among the following are specifically the advantages of bipolar design technology?A. High input resistance at low frequenciesB. Zero input bias currentC. High voltage gainD. High value of transconductance |
| A. | A & B |
| B. | A & C |
| C. | B & D |
| D. | C & D |
| Answer» E. | |