MCQOPTIONS
Saved Bookmarks
| 1. |
Which is/are the major drawback/s of including an additionaln__drift layer in a typical n-p-n bipolar power transistor? |
| A. | Increase in on-state device resistance by increasing on-state power loss |
| B. | Increase in on-state device resistance by decreasing on-state power loss |
| C. | Increase in on-state device resistance by completely stabilizing the level of on-state power loss |
| D. | All of the above |
| Answer» B. Increase in on-state device resistance by decreasing on-state power loss | |