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MCQOPTIONS
This section includes 1017 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics & Communication Engineering knowledge and support exam preparation. Choose a topic below to get started.
| 1001. |
The product kT (where k is Boltzmann's constant and T is absolute temperature) at room temperature is about |
| A. | 0.051 eV |
| B. | 0.026 eV |
| C. | 0.01 eV |
| D. | 0.001 eV |
| Answer» C. 0.01 eV | |
| 1002. |
An incremental model of a solid state device is one which represents the |
| A. | ac property of the device at desired operating point |
| B. | dc property of the device at all operating points |
| C. | complete ac and dc behaviour at all operating points |
| D. | ac property of the device at all operating points |
| Answer» B. dc property of the device at all operating points | |
| 1003. |
A zener diode is used in |
| A. | voltage regulator circuit |
| B. | amplifier circuits |
| C. | both voltage regulator and amplifier circuit |
| D. | none of the above |
| Answer» B. amplifier circuits | |
| 1004. |
The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification? |
| A. | AB |
| B. | BC |
| C. | CD |
| D. | BD |
| Answer» C. CD | |
| 1005. |
An increase in junction temperature of a semiconductor diode |
| A. | causes a small increase in reverse saturation current |
| B. | causes a large increase in reverse saturation current |
| C. | does not affect reverse saturation current |
| D. | may cause an increase or decrease in reverse saturation current depending on rating of diode |
| Answer» C. does not affect reverse saturation current | |
| 1006. |
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is |
| A. | 100 |
| B. | 99 |
| C. | 1.01 |
| D. | 0.99 |
| Answer» B. 99 | |
| 1007. |
In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then |
| A. | IEp and IEn are almost equal |
| B. | IEp >> IEn |
| C. | IEn >> IEp |
| D. | either (a) or (c) |
| Answer» C. IEn >> IEp | |
| 1008. |
Crossover distortion behaviour is characteristic of |
| A. | class A O/P stage |
| B. | class B O/P stage |
| C. | class AB output stage |
| D. | common pulse O/P state |
| Answer» C. class AB output stage | |
| 1009. |
One electron volt is equivalent to |
| A. | 1.6 x 10-10 joule |
| B. | 1.6 x 10-13 joule |
| C. | 1.6 x 10-16 joule |
| D. | 1.6 x 10-19 joule |
| Answer» E. | |
| 1010. |
In P-N junction, the region containing the uncompensated acceptor and donor ions is called |
| A. | transition zone |
| B. | depletion region |
| C. | neutral region |
| D. | active region |
| Answer» C. neutral region | |
| 1011. |
The ratio of impurity atoms to intrinsic semiconductor atoms in an extrinsic semiconductor is about. |
| A. | 0.048611111111111 |
| B. | 0.736111111 |
| C. | 1 : 100000 |
| D. | 0.116666667 |
| Answer» E. | |
| 1012. |
In which of these is reverse recovery time nearly zero? |
| A. | Zener diode |
| B. | Tunnel diode |
| C. | Schottky diode |
| D. | PIN diode |
| Answer» D. PIN diode | |
| 1013. |
Assertion (A): Hall effect is used to find the type of semiconductor. Reason (R): When a specimen of semiconductor carrying current I lies in a magnetic field the force on electrons and holes is in opposite directions. |
| A. | Both A and R are true and R is correct explanation of A |
| B. | Both A and R are true but R is not a correct explanation of A |
| C. | A is true but R is false |
| D. | A is false but R is true |
| Answer» B. Both A and R are true but R is not a correct explanation of A | |
| 1014. |
Recombination produces new electron-hole pairs |
| A. | 1 |
| B. | |
| C. | 1/11 kΩ |
| D. | 1/5 kΩ |
| Answer» C. 1/11 kŒ© | |
| 1015. |
The most commonly used semiconductor material is |
| A. | silicon |
| B. | germanium |
| C. | mixture of silicon and germanium |
| D. | none of the above |
| Answer» B. germanium | |
| 1016. |
Calculate the stability factor and change in IC from 25°C to 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter bias configuration. |
| A. | 42.53, 0.85 μA |
| B. | 40.91, 0.58 μA |
| C. | 40.91, 0.58 μA |
| D. | 41.10, 0.39 μA |
| Answer» B. 40.91, 0.58 ŒºA | |
| 1017. |
At room temperature the current in an intrinsic semiconductor is due to |
| A. | holes |
| B. | electrons |
| C. | ions |
| D. | holes and electrons |
| Answer» E. | |