Explore topic-wise MCQs in Electronics & Communication Engineering.

This section includes 158 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics & Communication Engineering knowledge and support exam preparation. Choose a topic below to get started.

151.

The extremely high input impedance of a MOSFET is primarily due to the

A. absence of its channel
B. negative gate- source voltage
C. depletion of current carriers
D. extremely small leakage current of its gate capacitor
Answer» E.
152.

A FET consists of a

A. source
B. drain
C. gate
D. all the above
Answer» E.
153.

When a transistor is fully switched ON, it is said to be

A. shorted
B. saturated
C. open
D. cut-off
Answer» C. open
154.

The emitter of a transistor is generally doped the heaviest because it

A. has to dissipate maximum power
B. has to supply the charge carriers
C. is the first region of the transistor
D. must possess low resistance
Answer» B. has to supply the charge carriers
155.

The base of an npn transistor is thin and

A. heavily doped
B. lightly doped
C. metallic
D. doped by a pentavalent material
Answer» C. metallic
156.

The barrier potential across each silicon depletion layer is

A. 0v
B. 0.3v
C. 0.7v
D. 1v
Answer» D. 1v
157.

In an npn transistor, the majority carriers in the emitter are

A. free electrons
B. holes
C. neither
D. both
Answer» B. holes
158.

A transistor has how many pn junctions?

A. 1
B. 2
C. 3
D. 4
Answer» C. 3