Explore topic-wise MCQs in Vlsi.

This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.

1.

Saturation velocity is attained when

A. energy gained is greater than energy lost
B. energy lost is greater than energy gained
C. energy gained equals energy lost
D. energy is fully drained
Answer» D. energy is fully drained
2.

As the applied field increases

A. drift velocity increases
B. energy decreases
C. drift velocity remains constant
D. energy remains constant
Answer» B. energy decreases
3.

Silicon can also be used as light-emitting device.

A. true
B. false
Answer» C.
4.

The probability of photon emission has energy which is _______ the band gap.

A. greater than
B. lesser than
C. equal to
D. does not depend on
Answer» D. does not depend on
5.

The effective mass of GaAs is _________ than the mass of a free electron.

A. 0.67 times greater
B. 0.67 times lesser
C. 0.067 times greater
D. 0.067 times lesser
Answer» D. 0.067 times lesser
6.

The curvature of ___________ determines the effective mass of electrons.

A. energy versus concentration
B. energy versus mass
C. energy versus momentum
D. energy versus structural design
Answer» D. energy versus structural design
7.

Narrow valleys correspond to

A. electrons with lower mass state
B. protons with lower mass state
C. electrons with higher mass state
D. protons with higher mass state
Answer» B. protons with lower mass state
8.

______ is a direct gap material with valence bond maximum.

A. silicon
B. gallium oxide
C. gallium arsenide
D. silicon arsenide
Answer» D. silicon arsenide