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This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
1. |
Saturation velocity is attained when |
A. | energy gained is greater than energy lost |
B. | energy lost is greater than energy gained |
C. | energy gained equals energy lost |
D. | energy is fully drained |
Answer» D. energy is fully drained | |
2. |
As the applied field increases |
A. | drift velocity increases |
B. | energy decreases |
C. | drift velocity remains constant |
D. | energy remains constant |
Answer» B. energy decreases | |
3. |
Silicon can also be used as light-emitting device. |
A. | true |
B. | false |
Answer» C. | |
4. |
The probability of photon emission has energy which is _______ the band gap. |
A. | greater than |
B. | lesser than |
C. | equal to |
D. | does not depend on |
Answer» D. does not depend on | |
5. |
The effective mass of GaAs is _________ than the mass of a free electron. |
A. | 0.67 times greater |
B. | 0.67 times lesser |
C. | 0.067 times greater |
D. | 0.067 times lesser |
Answer» D. 0.067 times lesser | |
6. |
The curvature of ___________ determines the effective mass of electrons. |
A. | energy versus concentration |
B. | energy versus mass |
C. | energy versus momentum |
D. | energy versus structural design |
Answer» D. energy versus structural design | |
7. |
Narrow valleys correspond to |
A. | electrons with lower mass state |
B. | protons with lower mass state |
C. | electrons with higher mass state |
D. | protons with higher mass state |
Answer» B. protons with lower mass state | |
8. |
______ is a direct gap material with valence bond maximum. |
A. | silicon |
B. | gallium oxide |
C. | gallium arsenide |
D. | silicon arsenide |
Answer» D. silicon arsenide | |