Explore topic-wise MCQs in Computer Science Engineering (CSE).

This section includes 242 Mcqs, each offering curated multiple-choice questions to sharpen your Computer Science Engineering (CSE) knowledge and support exam preparation. Choose a topic below to get started.

51.

The ROM is a

A. sequential circuit
B. combinational circuit
C. magnetic circuit
D. static circuit
Answer» C. magnetic circuit
52.

Since, ROM has the capability to read the information only then also it has been designed, why?

A. for controlling purpose
B. for loading purpose
C. for booting purpose
D. for erasing purpose
Answer» D. for erasing purpose
53.

ROM is made up of

A. nand and or gates
B. nor and decoder
C. decoder and or gates
D. nand and decoder
Answer» D. nand and decoder
54.

Which of the following has the capability to store the information permanently?

A. ram
B. rom
C. storage cells
D. both ram and rom
Answer» C. storage cells
55.

A ROM is defined as

A. read out memory
B. read once memory
C. read only memory
D. read one memory
Answer» D. read one memory
56.

The evolution of PLD began with

A. erom
B. ram
C. prom
D. eeprom
Answer» B. ram
57.

CD-ROM refers to

A. floppy disk
B. compact disk-read only memory
C. compressed disk-read only memory
D. compressed disk- random access memory
Answer» C. compressed disk-read only memory
58.

The full form of PLD is

A. programmable large device
B. programmable long device
C. programmable logic device
D. programmable lengthy device
Answer» D. programmable lengthy device
59.

Data stored in an electronic memory cell can be accessed at random and on demand using

A. memory addressing
B. direct addressing
C. indirect addressing
D. control unit
Answer» C. indirect addressing
60.

VLSI chip utilizes

A. nmos
B. cmos
C. bjt
D. all of the mentioned
Answer» E.
61.

A large memory is compressed into a small one by using

A. lsi semiconductor
B. vlsi semiconductor
C. cdr semiconductor
D. ssi semiconductor
Answer» C. cdr semiconductor
62.

Which one of the following has capability to store data in extremely high densities?

A. register
B. capacitor
C. semiconductor
D. flip-flop
Answer» D. flip-flop
63.

A minute magnetic toroid is also called as

A. large memory
B. small memory
C. core memory
D. both small and large memory
Answer» D. both small and large memory
64.

The very first computer memory consisted of

A. a small display
B. a large memory storage equipment
C. an automatic keyboard input
D. an automatic mouse input
Answer» C. an automatic keyboard input
65.

A register file holds

A. a large number of word of information
B. a small number of word of information
C. a large number of programs
D. a modest number of words of information
Answer» E.
66.

A register is able to hold

A. data
B. word
C. nibble
D. both data and word
Answer» C. nibble
67.

The instruction used in a program for executing them is stored in the

A. cpu
B. control unit
C. memory
D. microprocessor
Answer» D. microprocessor
68.

Memory is a/an

A. device to collect data from other computer
B. block of data to keep data separately
C. indispensable part of computer
D. device to connect through all over the world
Answer» D. device to connect through all over the world
69.

The data written in flip-flop remains stored as long as

A. d.c. power is supplied
B. d.c. power is removed
C. a.c. power is supplied
D. a.c. power is removed
Answer» B. d.c. power is removed
70.

The magnetic core memories have been replaced by semiconductor RAMs, why?

A. semiconductor rams are highly flexible
B. semiconductor rams have highest storing capacity
C. semiconductor rams are smaller in size
D. all of the mentioned
Answer» E.
71.

Which one of the following is volatile in nature?

A. rom
B. erom
C. prom
D. ram
Answer» E.
72.

Static RAM employs

A. bjt or mosfet
B. fet or jfet
C. capacitor or bjt
D. bjt or mos
Answer» E.
73.

Dynamic RAM employs

A. capacitor or mosfet
B. fet or jfet
C. capacitor or bjt
D. bjt or mos
Answer» B. fet or jfet
74.

How many types of RAMs are?

A. 2
B. 3
C. 4
D. 5
Answer» B. 3
75.

Computers invariably use RAM for

A. high complexity
B. high resolution
C. high speed main memory
D. high flexibility
Answer» D. high flexibility
76.

Which of the following control signals are selected for read and write operations in a RAM?

A. data buffer
B. chip select
C. read and write
D. memory
Answer» D. memory
77.

If a RAM chip has n address input lines then it can access memory locations upto

A. 2(n-1)
B. 2(n+1)
C. 2n
D. 22n
Answer» D. 22n
78.

RAM is also known as

A. rwm
B. mbr
C. mar
D. rom
Answer» B. mbr
79.

The n-bit address is placed in the

A. mbr
B. mar
C. ram
D. rom
Answer» C. ram
80.

The chip by which both the operation of read and write is performed

A. ram
B. rom
C. prom
D. eprom
Answer» B. rom
81.

What are the typical values of tOE?

A. 10 to 20 ns for bipolar
B. 25 to 100 ns for nmos
C. 12 to 50 ns for cmos
D. all of the mentioned
Answer» E.
82.

Which of the following is not a type of memory?

A. ram
B. fprom
C. eeprom
D. rom
Answer» D. rom
83.

                         method is used in centralized systems to perform out of order execution.

A. scorecard
B. score boarding
C. optimizing
D. redundancy
Answer» C. optimizing
84.

The time lost due to the branch instruction is often referred to as

A. latency
B. delay
C. branch penalty
D. none of the mentioned
Answer» D. none of the mentioned
85.

The situation wherein the data of operands are not available is called

A. data hazard
B. stock
C. deadlock
D. structural hazard
Answer» B. stock
86.

In this technique, a simple fault manifests into multiple N faults.

A. true
B. false
Answer» B. false
87.

For a NAND gate, struck-at 1 fault in second input line cannot be detected if

A. q is 1
B. q is 0
C. q changes from 1 to 0
D. q changes from 0 to 1
Answer» C. q changes from 1 to 0
88.

In this iterative test generation method, sequential logic is

A. used in the same pattern
B. converted to test logic
C. converted to combinational logic
D. converted to asynchronous logic
Answer» D. converted to asynchronous logic
89.

Which method is very time consuming?

A. d-algorithm
B. iterative test generation
C. pseudo exhaustive method
D. test generation pattern
Answer» C. pseudo exhaustive method
90.

Iterative test generation method suits for circuits with

A. no feedback loops
B. few feedback loops
C. more feedback loops
D. negative feedback loops only
Answer» C. more feedback loops
91.

In an OR gate, if A and B are two inputs and there is struck at 1 fault in B path, then output will be

A. a
B. 0
C. 1
D. b’
Answer» D. b’
92.

Which contributes to the necessary delay element?

A. flip-flops
B. circuit propagation elements
C. negative feedback path
D. shift registers
Answer» C. negative feedback path
93.

Which is the delay elements for clocked system?

A. and gates
B. or gates
C. flip-flops
D. multiplexers
Answer» D. multiplexers
94.

Outputs are functions of

A. present state
B. previous state
C. next state
D. present and next state
Answer» B. previous state
95.

Which constitutes the test vectors in sequential circuits?

A. feedback variables
B. delay factors
C. test patterns
D. all input combinations
Answer» B. delay factors
96.

Sequential circuit includes

A. delays
B. feedback
C. delays and feedback from input to output
D. delays and feedback from output to input
Answer» E.
97.

A user doesn’t want to use the IF statement for detecting clock edge. It is possible to do the same by using any other keyword in VHDL.

A. true
B. false
Answer» B. false
98.

Sequential circuits are represented as

A. finite state machine
B. infinite state machine
C. finite synchronous circuit
D. infinite asynchronous circuit
Answer» B. infinite state machine
99.

Which of the following attribute is generally used in implementation of sequential circuits?

A. ‘stable
B. ‘length
C. ‘last_event
D. ‘event
Answer» E.
100.

Which of the following line is correct for detecting positive edge of a clock?

A. if (clk’event and clk = ‘0’)
B. if (clk’event and clk = ‘1’)
C. if (clk’event or clk = ‘0’)
D. if (clk’event or clk = ‘1’)
Answer» C. if (clk’event or clk = ‘0’)