MCQOPTIONS
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MCQOPTIONS
This section includes 102 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
What is the approximate current level in the gate of an FET in dc analysis? |
| A. | 0 A |
| B. | 0.7 mA |
| C. | 0.3 mA |
| D. | Undefined |
| Answer» B. 0.7 mA | |
| 52. |
Calculate the value of V DS Q . |
| A. | 0 V |
| B. | 20 V |
| C. | 30 V |
| D. | 40 V |
| Answer» E. | |
| 53. |
Depletion-type MOSFETs do not permit operating points with positive values of V GS and levels of I D that exceed I DSS . |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» C. - | |
| 54. |
What are the voltages across R D and R S ? |
| A. | 0 V, 0 V |
| B. | 5 V, 5 V |
| C. | 10 V, 10 V |
| D. | 20 V, 20 V |
| Answer» B. 5 V, 5 V | |
| 55. |
Which of the following is a false statement regarding the dc load line when comparing self-bias and voltage-divider configurations? |
| A. | Both are linear lines. |
| B. | Both cross the origin. |
| C. | Both intersect the transfer characteristics. |
| D. | Both are obtained by writing Kirchhoff's voltage law (KVL) at the input side loop. |
| Answer» C. Both intersect the transfer characteristics. | |
| 56. |
The self-bias configuration eliminates the need for two dc supplies. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 57. |
Which of the following represents the voltage level of V GS in a self-bias configuration? |
| A. | V G |
| B. | V GS(off) |
| C. | V S |
| D. | V P |
| Answer» D. V P | |
| 58. |
Calculate V DS Q . |
| A. | 1.0 V |
| B. | 1.50 V |
| C. | 2.56 V |
| D. | 3.58 V |
| Answer» E. | |
| 59. |
Which of the following current equations is true? |
| A. | I G = I D |
| B. | I G = I S |
| C. | I D = I S |
| D. | I G = I D = I S |
| Answer» D. I G = I D = I S | |
| 60. |
At what value of R S does the circuit switch from depletion mode to enhancement mode? |
| A. | 250 |
| B. | 500 |
| C. | 10 M |
| D. | None of the above |
| Answer» B. 500 | |
| 61. |
Calculate the value of R D . |
| A. | 2 k |
| B. | 3 k |
| C. | 3.5 k |
| D. | 4.13 k |
| Answer» E. | |
| 62. |
On the universal JFET bias curve, the vertical scale labeled ________ can, in itself, be used to find the solution to ________ configurations. |
| A. | m, fixed-bias |
| B. | M, fixed-bias |
| C. | M, voltage-bias |
| D. | m, voltage-bias |
| Answer» B. M, fixed-bias | |
| 63. |
For what value of R S can the depletion-type MOSFETs operate in enhancement mode? |
| A. | 2.4 k |
| B. | 5 k |
| C. | 6.2 k |
| D. | None of the above |
| Answer» D. None of the above | |
| 64. |
Through proper design, a ________ can be introduced that will affect the biasing level of a voltage-controlled JFET resistor. |
| A. | photodiode |
| B. | thermistor |
| C. | laser diode |
| D. | Zener diode |
| Answer» C. laser diode | |
| 65. |
The input controlling variable for a(n) ________ is a current level and a voltage level for a(n) ________. |
| A. | BJT, FET |
| B. | FET, BJT |
| C. | FET, FET |
| D. | BJT, BJT |
| Answer» B. FET, BJT | |
| 66. |
Which of the following is (are) true of a self-bias configuration compared to a fixed-bias configuration? |
| A. | One of the dc supplies is eliminated. |
| B. | A resistor R S is added. |
| C. | V GS is a function of the output current I D . |
| D. | All of the above |
| Answer» E. | |
| 67. |
For what value of R 2 is V GS Q equal to 1 V? |
| A. | 10 M |
| B. | 100 M |
| C. | 110 M |
| D. | 220 M |
| Answer» C. 110 M | |
| 68. |
For what value of R D is the voltage across V DS zero? |
| A. | 2.400 k |
| B. | 5.167 k |
| C. | 6.167 k |
| D. | 6.670 k |
| Answer» C. 6.167 k | |
| 69. |
For the FET, the relationship between the input and output quantities is ________ due to the ________ term in Shockley's equation. |
| A. | nonlinear, cubed |
| B. | linear, proportional |
| C. | nonlinear, squared |
| D. | - |
| Answer» D. - | |
| 70. |
Given the values of V DQ and I DQ for this circuit, determine the required values of R D and R S . |
| A. | 2 k , 2 k |
| B. | 1 k , 5.3 k |
| C. | 3.2 k , 400 |
| D. | 2.5 k , 5.3 k |
| Answer» D. 2.5 k , 5.3 k | |
| 71. |
Which of the following is (are) the application(s) of a transistor? |
| A. | Amplification of signal |
| B. | Switching and control |
| C. | Computer logic circuitry |
| D. | All of the above |
| Answer» E. | |
| 72. |
Calculate the value of V DS . |
| A. | 0 V |
| B. | 0.35 V |
| C. | 3.8 V |
| D. | 33.5 V |
| Answer» D. 33.5 V | |
| 73. |
It is desirable to design a bias circuit that is independent of the transistor beta. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 74. |
Which of the following is assumed in the approximate analysis of a voltage divider circuit? |
| A. | I B is essentially zero amperes. |
| B. | R 1 and R 2 are considered to be series elements. |
| C. | R E 10R 2 |
| D. | All of the above |
| Answer» E. | |
| 75. |
The ratio of which two currents is represented by ? |
| A. | I C and I E |
| B. | I C and I B |
| C. | I E and I B |
| D. | None of the above |
| Answer» C. I E and I B | |
| 76. |
For the BJT to operate in the saturation region, the base-emitter junction must be ________-biased and the base-collector junction must be ________-biased. |
| A. | forward, forward |
| B. | forward, reverse |
| C. | reverse, reverse |
| D. | reverse, forward |
| Answer» B. forward, reverse | |
| 77. |
Calculate R sat if V CE = 0.3 V. |
| A. | 49.2 |
| B. | 49.2 k |
| C. | 49.2 m |
| D. | 49.2 M |
| Answer» B. 49.2 k | |
| 78. |
For the typical transistor amplifier in the active region, V CE is usually about ________ % to ________ % of V CC . |
| A. | 10, 60 |
| B. | 25, 75 |
| C. | 40, 90 |
| D. | - |
| Answer» C. 40, 90 | |
| 79. |
The total time required for the transistor to switch from the "off" to the "on" state is designated as t on and defined as the delay time plus the time element. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 80. |
Use this table to determine the change in I C from 25ºC to 175ºC for R B / R E = 250 due to the S(I CO ) stability factor. Assume an emitter-bias configuration. |
| A. | 140.34 nA |
| B. | 140.34 A |
| C. | 42.53 nA |
| D. | 0.14034 nA |
| Answer» C. 42.53 nA | |
| 81. |
Determine the values of V CB and I B for this circuit. |
| A. | 1.4 V, 59.7 A |
| B. | –1.4 V, 59.7 A |
| C. | –9.3 V, 3.58 A |
| D. | 9.3 V, 3.58 A |
| Answer» B. –1.4 V, 59.7 A | |
| 82. |
Which of the following voltages must have a negative level (value) in any npn bias circuit? |
| A. | V BE |
| B. | V CE |
| C. | V BC |
| D. | None of the above |
| Answer» D. None of the above | |
| 83. |
Calculate E Th for this network. |
| A. | ?12.12 V |
| B. | 16.35 V |
| C. | ?3.65 V |
| D. | 10 V |
| Answer» D. 10 V | |
| 84. |
Which of the following currents is nearly equal to each other? |
| A. | I B and I C |
| B. | I E and I C |
| C. | I B and I E |
| D. | I B , I C , and I E |
| Answer» C. I B and I E | |
| 85. |
Determine I CQ at a temperature of 175º C if I CQ = 2 mA at 25º C for R B / R E = 20 due to the S( ) stability factor. |
| A. | 2.417 mA |
| B. | 2.392 mA |
| C. | 2.25 mA |
| D. | 2.58 mA |
| Answer» B. 2.392 mA | |
| 86. |
Calculate the storage time in a transistor switching network if t off is 56 ns, t f = 14 ns, and t r = 20 ns. |
| A. | 70 ns |
| B. | 42 ns |
| C. | 36 ns |
| D. | 34 ns |
| Answer» C. 36 ns | |
| 87. |
Calculate I C sat . |
| A. | 35.29 mA |
| B. | 5.45 mA |
| C. | 1.86 mA |
| D. | 4.72 mA |
| Answer» E. | |
| 88. |
For an "on" transistor, the voltage V BE should be in the neighborhood of 0.7 V. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 89. |
Which of the following is (are) a stability factor? |
| A. | S(I CO ) |
| B. | S(V BE ) |
| C. | S( ) |
| D. | All of the above |
| Answer» E. | |
| 90. |
In a voltage-divider circuit, which one of the stability factors has the least effect on the device at very high temperature? |
| A. | S(I CO ) |
| B. | S(V BE ) |
| C. | S( ) |
| D. | Undefined |
| Answer» D. Undefined | |
| 91. |
In the case of this circuit, you must assume that V E = 0.1·V CC in order to calculate R C and R E . |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» B. False | |
| 92. |
You can select the values for the emitter and collector resistors from the information that is provided for this circuit. |
| A. | True |
| B. | False |
| C. | - |
| D. | - |
| Answer» C. - | |
| 93. |
At what region of operation is the base-emitter junction forward biased and the base-collector junction reverse biased? |
| A. | Saturation |
| B. | Linear or active |
| C. | Cutoff |
| D. | None of the above |
| Answer» C. Cutoff | |
| 94. |
Which of the following is (are) related to an emitter-follower configuration? |
| A. | The input and output signals are in phase. |
| B. | The voltage gain is slightly less than 1. |
| C. | Output is drawn from the emitter terminal. |
| D. | All of the above |
| Answer» E. | |
| 95. |
For what value of does the transistor enter the saturation region? |
| A. | 20 |
| B. | 50 |
| C. | 75 |
| D. | 116 |
| Answer» E. | |
| 96. |
Determine the change in I C from 25ºC to 175ºC for the transistor defined in this table for fixed-bias with R B = 240 k and = 100 due to the S(V BE ) stability factor. |
| A. | 145.8 A |
| B. | 145.8 nA |
| C. | –145.8 A |
| D. | –145.8 nA |
| Answer» B. 145.8 nA | |
| 97. |
Calculate the value of V CE Q . |
| A. | 8.78 V |
| B. | 0 V |
| C. | 7.86 V |
| D. | 18 V |
| Answer» D. 18 V | |
| 98. |
Calculate the voltage across the 91 k resistor. |
| A. | 18 V |
| B. | 9.22 V |
| C. | 3.23 V |
| D. | None of the above |
| Answer» D. None of the above | |
| 99. |
In a fixed-bias circuit, which one of the stability factors overrides the other factors? |
| A. | S(I CO ) |
| B. | S(V BE ) |
| C. | S( ) |
| D. | Undefined |
| Answer» D. Undefined | |
| 100. |
For the BJT to operate in the active (linear) region, the base-emitter junction must be ________-biased and the base-collector junction must be ________-biased. |
| A. | forward, forward |
| B. | forward, reverse |
| C. | reverse, reverse |
| D. | reverse, forward |
| Answer» C. reverse, reverse | |