MCQOPTIONS
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MCQOPTIONS
This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Vlsi knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The transfer characteristics of BiCMOS inverter is? |
| A. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15a.png"><img alt="Transfer characteristics of BiCMOS inverter - option a" class="alignnone size-full wp-image-161883" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15a.png" width="400"/></a> |
| B. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15b.png"><img alt="Transfer characteristics of BiCMOS inverter - option b" class="alignnone size-full wp-image-161884" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15b.png" width="400"/></a> |
| C. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15c.png"><img alt="Transfer characteristics of BiCMOS inverter - option c" class="alignnone size-full wp-image-161885" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15c.png" width="400"/></a> |
| D. | None of the mentioned |
| Answer» B. <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15b.png"><img alt="Transfer characteristics of BiCMOS inverter - option b" class="alignnone size-full wp-image-161884" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q15b.png" width="400"/></a> | |
| 2. |
The Ebers Moll equivalent circuit of BJT operating in forwarding active region is? |
| A. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14a.png"><img alt="Ebers Moll equivalent circuit of BJT operating in forwarding active region - option a" class="alignnone size-full wp-image-161880" height="439" sizes="(max-width: 373px) 100vw, 373px" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14a.png" srcset="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14a.png 373w, https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14a-255x300.png 255w" width="373"/></a> |
| B. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14b.png"><img alt="Ebers Moll equivalent circuit of BJT operating in forwarding active region - option b" class="alignnone size-full wp-image-161881" height="455" sizes="(max-width: 373px) 100vw, 373px" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14b.png" srcset="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14b.png 373w, https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14b-246x300.png 246w" width="373"/></a> |
| C. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png"><img alt="Ebers Moll equivalent circuit of BJT operating in forwarding active region - option c" class="alignnone size-full wp-image-161882" height="432" sizes="(max-width: 309px) 100vw, 309px" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png" srcset="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png 309w, https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c-215x300.png 215w" width="309"/></a> |
| D. | None of the mentioned |
| Answer» C. <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png"><img alt="Ebers Moll equivalent circuit of BJT operating in forwarding active region - option c" class="alignnone size-full wp-image-161882" height="432" sizes="(max-width: 309px) 100vw, 309px" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png" srcset="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c.png 309w, https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q14c-215x300.png 215w" width="309"/></a> | |
| 3. |
In BiCMOS, the analysis of the operation of BJT is well explained by ___________ |
| A. | RC Model |
| B. | Emitter resister model |
| C. | Ebers Moll Model |
| D. | Hybrid model |
| Answer» D. Hybrid model | |
| 4. |
What is the work of BJT in BiCMOS? |
| A. | Current controlled Voltage source |
| B. | Voltage controlled Current source |
| C. | Current controlled current source |
| D. | Voltage controlled current source |
| Answer» C. Current controlled current source | |
| 5. |
Which is the proper BiCMOS inverter circuit? |
| A. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10a.png"><img alt="The proper BiCMOS inverter circuit - option a" class="alignnone size-full wp-image-161875" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10a.png" width="400"/></a> |
| B. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10b.png"><img alt="The proper BiCMOS inverter circuit - option b" class="alignnone size-full wp-image-161876" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10b.png" width="400"/></a> |
| C. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10c.png"><img alt="The proper BiCMOS inverter circuit - option c" class="alignnone size-full wp-image-161877" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10c.png" width="400"/></a> |
| D. | <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10d.png"><img alt="The proper BiCMOS inverter circuit - option d" class="alignnone size-full wp-image-161878" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10d.png" width="400"/></a> |
| Answer» D. <a href="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10d.png"><img alt="The proper BiCMOS inverter circuit - option d" class="alignnone size-full wp-image-161878" height="350" src="https://www.sanfoundry.com/wp-content/uploads/2017/05/vlsi-questions-answers-bicmos-logic-gates-q10d.png" width="400"/></a> | |
| 6. |
The collector contact region is doped with higher concentration of n-type impurities due to __________ |
| A. | It creates a depletion region at the contact surface |
| B. | It creates a low conductivity path between collector region and contact |
| C. | It reduces contact resistance |
| D. | It can withstand high voltages as compared to collector region |
| Answer» D. It can withstand high voltages as compared to collector region | |
| 7. |
The n-well collector is formed by __________ |
| A. | Lightly doped n-type epitaxial layer on p-Substrate |
| B. | Heavily doped n-type epitaxial layer on p-Substrate |
| C. | Lightly doped n-type diffused layer on p-Substrate |
| D. | Heavily doped n-type diffused layer on p-Substrate |
| Answer» B. Heavily doped n-type epitaxial layer on p-Substrate | |
| 8. |
The n-well created for Bipolar Transistor in BiCMOS is used as __________ |
| A. | Substrate |
| B. | Collector |
| C. | Emitter |
| D. | None of the mentioned |
| Answer» C. Emitter | |
| 9. |
The Bipolar Transistor is fabricated on __________ |
| A. | Same substrate of nMOS |
| B. | N-well in p Substrate |
| C. | P-well in n Substrate |
| D. | Same substrate of pMOS |
| Answer» B. N-well in p Substrate | |
| 10. |
Which of the following is the drawback of the BiCMOS circuits? |
| A. | Sensitivity is less load capacitance |
| B. | Bipolar transistors are used for driving current to the load capacitance but not for the logic operations |
| C. | Increased fabrication Complexity |
| D. | All of the mentioned |
| Answer» D. All of the mentioned | |
| 11. |
In BiCMOS inverter, the BJT used are __________ |
| A. | Only Npn BJT |
| B. | Only Pnp BJT |
| C. | Both npn and pnp BJT |
| D. | Multi emitter npn BJT |
| Answer» B. Only Pnp BJT | |
| 12. |
The high current driving capability of the BiCMOS is due to __________ |
| A. | NMOS in saturation mode |
| B. | PMOS in saturation mode |
| C. | CMOS |
| D. | BJT |
| Answer» E. | |
| 13. |
The transistors used in BiCMOS are __________ |
| A. | BJT |
| B. | MOSFET |
| C. | Both BJT and MOSFETs |
| D. | JFET |
| Answer» D. JFET | |
| 14. |
The BiCMOS are preferred over CMOS due to ______________ |
| A. | Switching speed is more compared to CMOS |
| B. | Sensitivity is less with respect to the load capacitance |
| C. | High current drive capability |
| D. | All of the mentioned |
| Answer» E. | |