Direction: It consists of two statements, one labeled as ‘Statement (I)’ and the others as ‘Statement (II)’. You are to examine these two statements carefully and select the answer using the codes given below:Statement (I): The Dielectric constant of a substance, under the influence of alternating electric fields is, in general, a ‘complex’ quantity.Statement (II): The ‘imaginary’ part of the dielectric constant is a measure of the dielectric loss in the substance.

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)

Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

Statement (I) is true but Statement (II) is false

Statement (I) is false but Statement (II) is true

46 + Mcqs in Area Capacitance in Vlsi Page 1 McqOptions

1.	What is the transition point of an inverter?
A.	Vdd
B.	0.5 Vdd
C.	0.25 Vdd
D.	2 Vdd
Answer» C. 0.25 Vdd

Discussion

2.	What is the delay unit of 1.2 micron technology?
A.	0.064 nsec
B.	0.0064 nsec
C.	0.046 nsec
D.	0.0046 nsec
Answer» D. 0.0046 nsec

Discussion

3.	What is the delay unit of 5 micron technology?
A.	1 nsec
B.	0.1 nsec
C.	0.01 nsec
D.	1 sec
Answer» C. 0.01 nsec

Discussion

4.	What is the value of gate capacitance?
A.	0.25 square Cg
B.	1 square Cg
C.	1.25 square Cg
D.	1.5 square Cg
Answer» C. 1.25 square Cg

Discussion

5.	Relative area for L = 20λ and W = 3λ is?
A.	10
B.	15
C.	1/15
D.	1/10
Answer» C. 1/15

Discussion

6.	What is the standard square Cg value of a 1.2 micron technology?
A.	0.01 pF
B.	0.0023 pF
C.	0.023 pF
D.	0.23 pF
Answer» C. 0.023 pF

Discussion

7.	What is the standard square Cg value of a 5 micron technology?
A.	0.01 pF
B.	0.1 pF
C.	1 pF
D.	10 pF
Answer» B. 0.1 pF

Discussion

8.	A feature size square has ___________
A.	L > W
B.	W > L
C.	L = W
D.	L > d
Answer» D. L > d

Discussion

9.	What is the relative capacitance of diffusion region of 5 micron technology?
A.	1
B.	0.25
C.	1.25
D.	2
Answer» C. 1.25

Discussion

10.	Area capacitance of diffusion region of 2 micron technology is _____ pF X 10(-4) (micrometer)2.
A.	2
B.	2.75
C.	3.75
D.	4.75
Answer» D. 4.75

Discussion

11.	Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.
A.	1
B.	2
C.	4
D.	0.4
Answer» D. 0.4

Discussion

12.	Conducting layer is separated from substrate using ____________
A.	dielectric layer
B.	silicon layer
C.	metal layer
D.	diffusion layer
Answer» B. silicon layer

Discussion

13.	A parallel plate air-filled capacitor has a plate area of 10-4 m2 and plate separation of 10-3 m. It is connected to a 2 V, 1.8 GHz source. The magnitude of the displacement current is $\left( {{\varepsilon _0} = 8.85 \times {{10}^{ - 12}}F/m} \right)$
A.	200 mA
B.	20 mA
C.	20 A
D.	2 mA
Answer» B. 20 mA

Discussion

14.	In the inner region between the two charged plates of a parallel plate capacitor the electric ﬁeld is equal to ____________. ('Q' is magnitude of charge on each plate of area 'A')
A.	εo / AQ
B.	Q / (εoA)
C.	A / (εoQ)
D.	QA / εo
Answer» C. A / (εoQ)

Discussion

15.	A parallel-plate capacitor has plates of dimensions 2 cm × 3 cm separated by a 1 mm thickness of the paper. The capacitance of this device is (Given: dielectric constant of paper K = 3.7 and ϵ0 = 8.85 × 10-12 C2 N-1 m-2)
A.	20 pF
B.	10 pF
C.	10 μF
D.	20 μF
Answer» B. 10 pF

Discussion

16.	If the effective capacitances of two capacitors connected in series is 75 μF and in parallel is 400 μF, then the capacitances of each of the capacitors is _______________. (in μF)
A.	200 each
B.	100 and 300
C.	150 and 250
D.	125 and 275
Answer» C. 150 and 250

Discussion

17.	Direction: It consists of two statements, one labeled as ‘Statement (I)’ and the others as ‘Statement (II)’. You are to examine these two statements carefully and select the answer using the codes given below:Statement (I): The Dielectric constant of a substance, under the influence of alternating electric fields is, in general, a ‘complex’ quantity.Statement (II): The ‘imaginary’ part of the dielectric constant is a measure of the dielectric loss in the substance.
A.	Both Statement (I) and Statement (II) are individually true and Statement (II) is the correct explanation of Statement (I)
B.	Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)
C.	Statement (I) is true but Statement (II) is false
D.	Statement (I) is false but Statement (II) is true
Answer» B. Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I)

Discussion

18.	For the arrangement of capacitors as shown in the circuit, the effective capacitance between the points A and B is (capacitance of each capacitor is 4 μF)
A.	4 μF
B.	2 μF
C.	1 μF
D.	8 μF
Answer» B. 2 μF

Discussion

19.	A network of four 10 μF capacitors is shown in figure. The equivalent capacitance of the network between points A and B is
A.	$\dfrac{30}{4}\mu F$
B.	40 μF
C.	$\dfrac{40}{3}\mu F$
D.	10 μF
Answer» D. 10 μF

Discussion

20.	A parallel plate capacitor having an area of 6 × 10-4 m2 and plate separation of 3 × 10-3 m, across which a potential of 10 V is applied. If a material having a dielectric constant of 5 is positioned within the region between the plates, what will be the capacitance? [Permittivity of vacuum = 8.85 × 10-12 F/m]
A.	8.85 × 10-12 F
B.	17.7 × 10-12 F
C.	26.55 × 10-12 F
D.	35.4 × 10-12 F
Answer» B. 17.7 × 10-12 F

Discussion

21.	Dielectrics are:
A.	Insulating materials
B.	Semiconducting materials
C.	Magnetic materials
D.	Ferroelectric materials
Answer» B. Semiconducting materials

Discussion

22.	A capacitor with capacitance 5 μF is charged to 5 μC. If the plates are pulled apart to reduce the capacitance to 2 μF, how much work is done?
A.	6.25 × 10-6 J
B.	3.75 × 10-6 J
C.	2.16 × 10-6 J
D.	2.55 × 10-6 J
Answer» C. 2.16 × 10-6 J

Discussion

23.	A 50μf capacitor in a defibrillator is charged to 3000V. The energy stored in the capacitor is sent through the victim during a pulse of duration 2 ms; the power of the pulse is close to:
A.	50 Kw
B.	75 kW
C.	112.5 kW
D.	200 kW
Answer» D. 200 kW

Discussion

24.	Energy stored in a parallel plate capacitor is equal to? ('Q' is magnitude of charge on each plate of the capacitor of capacitance 'C')
A.	C2/2Q
B.	Q2/2C
C.	Q2/C
D.	C2/Q
Answer» C. Q2/C

Discussion

25.	If the capacitance of a conductor is defined as C = Q/V, then the charges on the two conductors of the capacitor are _____________.
A.	Q/2 an d -Q/2
B.	Q and -Q
C.	Q and Q
D.	-Q/2 and -Q/2
Answer» C. Q and Q

Discussion

26.	Consider the following:In a parallel plate capacitor, let the charge be held constant while the dielectric material is replaced by a different dielectric. Consider1. Stored energy.2. Electric field intensity.3. Capacitance.Which of these changes?
A.	1 only
B.	1 and 2 only
C.	2 and 3 only
D.	1, 2 and 3
Answer» E.

Discussion

27.	A system of 2 capacitors of capacitance 2 μ F and 4 μ F is connected in series across a potential difference of 6V. The electric charge and energy stored in the system are
A.	10 μ C and 30 μJ
B.	36 μ C and 108 μJ
C.	8 μ C and 24 μJ
D.	1 μ C and 3 μJ
Answer» D. 1 μ C and 3 μJ

Discussion

28.	A Farad is defined as
A.	Stat coulomb/volt
B.	Coulomb/volt
C.	Coulomb x volt
D.	Stat coulomb x volt
Answer» C. Coulomb x volt

Discussion

29.	In the given circuit, the charge on 4 μF capacitor will be:
A.	5.4 μC
B.	9.6 μC
C.	13.4 μC
D.	24 μC
Answer» E.

Discussion

30.	A capacitor (condenser) is used in an electrical circuit to
A.	step down voltage
B.	step up voltage
C.	store electric charge
D.	produce electric charge
Answer» D. produce electric charge

Discussion

31.	A capacitor of capacitance 800 pF is charged by an electric source of 100 V. The electrostatic energy stored by the capacitor is nearly
A.	8.0 $\mu J$
B.	4.0 nj
C.	4.0 $\mu J$
D.	8.0 J
Answer» D. 8.0 J

Discussion

32.	Dielectric losses may occur due to:
A.	conductivity
B.	polarisation
C.	radioactivity
D.	ionisation
Answer» C. radioactivity

Discussion

33.	A capacitor of capacitance C is charged by connecting it to a battery of e.m.f. E. The capacitor is now disconnected and reconnected to the battery with the polarity reversed. The heat developed in the connecting wires is
A.	0.5CE2
B.	EC2
C.	2CE2
D.	3EC2
Answer» D. 3EC2

Discussion

34.	DELAY_UNIT_OF_5_MICRON_TECHNOLOGY_IS?$
A.	1 nsec
B.	0.1 nsec
C.	0.01 nsec
D.	1 sec
Answer» C. 0.01 nsec

Discussion

35.	What is the transition point of an inverter?$
A.	Vdd
B.	0.5 Vdd
C.	0.25 Vdd
D.	2 Vdd
Answer» C. 0.25 Vdd

Discussion

36.	Delay unit of 1.2 micron technology is$
A.	0.064 nsec
B.	0.0064 nsec
C.	0.046 nsec
D.	0.0046 nsec
Answer» D. 0.0046 nsec

Discussion

37.	What is the desired or safe delay value for 5 micron technology?
A.	0.3 nsec
B.	0.5 nsec
C.	0.1 nsec
D.	0.2 nsec
Answer» B. 0.5 nsec

Discussion

38.	The value of gate capacitance i?
A.	0.25 square Cg
B.	1 square Cg
C.	1.25 square Cg
D.	1.5 square Cg
Answer» C. 1.25 square Cg

Discussion

39.	Relative area for L = 20‚âà√≠¬¨‚Ñ¢ and W = 3‚âà√≠¬¨‚Ñ¢ is$
A.	10
B.	15
C.	1/15
D.	1/10
Answer» C. 1/15

Discussion

40.	The standard square Cg value of a 1.2 micron technology is
A.	0.01 pF
B.	0.0023 pF
C.	0.023 pF
D.	0.23 pF
Answer» C. 0.023 pF

Discussion

41.	The standard square Cg value of a 5 micron technology is
A.	0.01 pF
B.	0.1 pF
C.	1 pF
D.	10 pF
Answer» B. 0.1 pF

Discussion

42.	A feature size square has
A.	L > W
B.	W > L
C.	L = W
D.	L > d
Answer» D. L > d

Discussion

43.	Relative capacitance of diffusion region of 5 micron technology is
A.	1
B.	0.25
C.	1.25
D.	2
Answer» C. 1.25

Discussion

44.	Area capacitance of diffusion region of 2 micron technology is _____ pF X 10^(-4) (micrometer)².
A.	2
B.	2.75
C.	3.75
D.	4.75
Answer» D. 4.75

Discussion

45.	Gate to channel capacitance of 5 micron technology is _____ pF X 10^(-4) (micrometer)².
A.	1
B.	2
C.	4
D.	0.4
Answer» D. 0.4

Discussion

46.	Conducting layer is separated from substrate using
A.	dielectric layer
B.	silicon layer
C.	metal layer
D.	diffusion layer
Answer» B. silicon layer

Discussion

19.	A network of four 10 μF capacitors is shown in figure. The equivalent capacitance of the network between points A and B is
A.	\(\dfrac{30}{4}\mu F\)
B.	40 μF
C.	\(\dfrac{40}{3}\mu F\)
D.	10 μF
Answer» D. 10 μF

31.	A capacitor of capacitance 800 pF is charged by an electric source of 100 V. The electrostatic energy stored by the capacitor is nearly
A.	8.0 \(\mu J\)
B.	4.0 nj
C.	4.0 \(\mu J\)
D.	8.0 J
Answer» D. 8.0 J

Explore topic-wise MCQs in Vlsi.

What is the transition point of an inverter?

What is the delay unit of 1.2 micron technology?

What is the delay unit of 5 micron technology?

What is the value of gate capacitance?

Relative area for L = 20λ and W = 3λ is?

What is the standard square Cg value of a 1.2 micron technology?

What is the standard square Cg value of a 5 micron technology?

A feature size square has ___________

What is the relative capacitance of diffusion region of 5 micron technology?

Area capacitance of diffusion region of 2 micron technology is _____ pF X 10(-4) (micrometer)2.

Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.

Conducting layer is separated from substrate using ____________

A parallel plate air-filled capacitor has a plate area of 10-4 m2 and plate separation of 10-3 m. It is connected to a 2 V, 1.8 GHz source. The magnitude of the displacement current is \(\left( {{\varepsilon _0} = 8.85 \times {{10}^{ - 12}}F/m} \right)\)

In the inner region between the two charged plates of a parallel plate capacitor the electric ﬁeld is equal to ____________. ('Q' is magnitude of charge on each plate of area 'A')

A parallel-plate capacitor has plates of dimensions 2 cm × 3 cm separated by a 1 mm thickness of the paper. The capacitance of this device is (Given: dielectric constant of paper K = 3.7 and ϵ0 = 8.85 × 10-12 C2 N-1 m-2)

If the effective capacitances of two capacitors connected in series is 75 μF and in parallel is 400 μF, then the capacitances of each of the capacitors is _______________. (in μF)

For the arrangement of capacitors as shown in the circuit, the effective capacitance between the points A and B is (capacitance of each capacitor is 4 μF)

A network of four 10 μF capacitors is shown in figure. The equivalent capacitance of the network between points A and B is

Dielectrics are:

A capacitor with capacitance 5 μF is charged to 5 μC. If the plates are pulled apart to reduce the capacitance to 2 μF, how much work is done?

A 50μf capacitor in a defibrillator is charged to 3000V. The energy stored in the capacitor is sent through the victim during a pulse of duration 2 ms; the power of the pulse is close to:

Energy stored in a parallel plate capacitor is equal to? ('Q' is magnitude of charge on each plate of the capacitor of capacitance 'C')

If the capacitance of a conductor is defined as C = Q/V, then the charges on the two conductors of the capacitor are _____________.

Consider the following:In a parallel plate capacitor, let the charge be held constant while the dielectric material is replaced by a different dielectric. Consider1. Stored energy.2. Electric field intensity.3. Capacitance.Which of these changes?

A system of 2 capacitors of capacitance 2 μ F and 4 μ F is connected in series across a potential difference of 6V. The electric charge and energy stored in the system are

A Farad is defined as

In the given circuit, the charge on 4 μF capacitor will be:

A capacitor (condenser) is used in an electrical circuit to

A capacitor of capacitance 800 pF is charged by an electric source of 100 V. The electrostatic energy stored by the capacitor is nearly

Dielectric losses may occur due to:

A capacitor of capacitance C is charged by connecting it to a battery of e.m.f. E. The capacitor is now disconnected and reconnected to the battery with the polarity reversed. The heat developed in the connecting wires is

DELAY_UNIT_OF_5_MICRON_TECHNOLOGY_IS?$

What is the transition point of an inverter?$

Delay unit of 1.2 micron technology is$

What is the desired or safe delay value for 5 micron technology?

The value of gate capacitance i?

Relative area for L = 20‚âà√≠¬¨‚Ñ¢ and W = 3‚âà√≠¬¨‚Ñ¢ is$

The standard square Cg value of a 1.2 micron technology is

The standard square Cg value of a 5 micron technology is

A feature size square has

Relative capacitance of diffusion region of 5 micron technology is

Area capacitance of diffusion region of 2 micron technology is _____ pF X 10(-4) (micrometer)2.

Gate to channel capacitance of 5 micron technology is _____ pF X 10(-4) (micrometer)2.

Conducting layer is separated from substrate using

Area capacitance of diffusion region of 2 micron technology is _____ pF X 10^(-4) (micrometer)².

Gate to channel capacitance of 5 micron technology is _____ pF X 10^(-4) (micrometer)².