Which of the following statements about an Insulated Gate Bipolar Tran – McqOptions

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1.	Which of the following statements about an Insulated Gate Bipolar Transistor (IGBT) is NOT true?
A.	The IGBT is developed by combining the characteristics of a BJT and a MOSFET
B.	The on-state losses of an IGBT are lesser than a MOSFET
C.	The IGBT is slower than a BJT
D.	The IGBT contains a parasitic thyristor
Answer» D. The IGBT contains a parasitic thyristor

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