When a silicon diode having a doping concentration of NA = 9 × 1016 /cm3 on p-side and ND = 1 × 1016/cm3 on the n-side is reverse biased, the total depletion width is found to be 3 μm. Given that the permittivity of silicon is 1.04 × 10-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are

When a silicon diode having a doping concentration of NA = 9 × 1016 /

1.	When a silicon diode having a doping concentration of NA = 9 × 1016 /cm3 on p-side and ND = 1 × 1016/cm3 on the n-side is reverse biased, the total depletion width is found to be 3 μm. Given that the permittivity of silicon is 1.04 × 10-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are
A.	2.7 μm and 2.3 × 105 V/cm
B.	0.3 μm and 4.15 × 105 V/cm
C.	0.3 μm and 0.42 × 105 V/cm
D.	2.1 μm and 0.42 × 105 V/cm
Answer» C. 0.3 μm and 0.42 × 105 V/cm