1.

The transistor of following figure in Si diode with a base current of 40 μA and ICBO = 0, if VBB = 6V, RE = 2 kΩ and β = 90, IBQ = 20 μA then IEQ =

A. 1800 μA
B. 180 μA
C. 2000 μA
D. 3000 μA
Answer» B. 180 μA


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