1.

The transconductance gm of an FET in the saturation region equals

A. \(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]\)
B. \(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}{\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]^2}\)
C. \(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}{\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]^{1/2}}\)
D. \(\frac{I}{{{V_P}}}{\left[ {{I_{DSS}}X{I_{DS}}} \right]^{1/2}}\)
Answer» B. \(\frac{{ - 2{I_{DSS}}}}{{{V_P}}}{\left[ {1 - \frac{{{V_{GS}}}}{{{V_P}}}} \right]^2}\)


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