The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10-19C, thermal voltage = 26mV and electron mobility = 1350 cm2/V-sThe magnitude of the electron drift current density at x = 0.5 μm is

• A. 2.16 x 104 A/cm2
• B. 1.08 x 104 A/cm2
• C. 4.32 x 103 A/cm2
• D. 6.48 x 102 A/cm2