The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 and \(\frac{{kT}}{q} = 26\;mV\). The electron concentration at the edge of the depletion region p-side is

The doping concentrations on the p-side and n-side of a silicon diode

1.	The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 and \(\frac{{kT}}{q} = 26\;mV\). The electron concentration at the edge of the depletion region p-side is
A.	2.3 × 109 cm-3
B.	1 × 1016 cm-3
C.	1 × 1017 cm-3
D.	2.25 × 106 cm-3
Answer» B. 1 × 1016 cm-3