The donor and accepter impurities in an abrupt junction silicon diode are 1 × 1016 cm-3 and 5 × 1018 cm-3, respectively. Assume that the intrinsic carrier concentration is silicon ni = 1.5 × 1010 cm-3 at \(300\;K,\;\frac{{kT}}{q} = 26\;mV\) and the permittivity of silicon ϵsi = 1.04 × 10-12 F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

• A. 0.7 V and 1 × 10-4 cm
• B. 0.86 V and 1 × 10-4 cm
• C. 0.7 V and 3.3 × 10-5 cm
• D. 0.86 V and 3.3 × 10-5 cm