The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTH of -0.16 V, \(C_{ox}'\) of 100 nF/cm2, and a metal function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is VTH, the magnitude of depletion charge per unit area (in C/cm2) is

The band diagram of a p-type semiconductor with a band-gap of 1 eV is

1.	The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTH of -0.16 V, \(C_{ox}'\) of 100 nF/cm2, and a metal function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is VTH, the magnitude of depletion charge per unit area (in C/cm2) is
A.	1.70 × 10-8
B.	0.52 × 10-8
C.	1.41 × 10-8
D.	0.93 × 10-8
Answer» B. 0.52 × 10-8