Statement I: For memory capacitors, one of the popular structure is trench capacitor to push memory densities to 64 Mbits and beyond.Statement II: The sides of the trench capacitor are doped n+ and the bottom of the trench has a p+ region, that forms a channel - stop region to isolate adjacent capacitorsIn the light of the above statements, choose the correct answer from the options given below

• A. Both Statement I and Statement II are true
• B. Both Statement I and Statement II are false
• C. Statement I is correct but Statement II is false
• D. Statement I is incorrect but Statement II is true