In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is

used to reduce the parasitic capacitance

In the fabrication of n-p-n transistor in an IC, the buried layer on t

1.	In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
A.	P+ -doped
B.	n+ -doped
C.	used to reduce the parasitic capacitance
D.	located in the emitter region
Answer» D. located in the emitter region