1.

In a PNP transistor, due to doping the emitter conductivity is 10 times base conductivity. Electron diffusion length in a more heavily doped emitter is half the hole diffusion length in the base. The base width is one-tenth of the hole diffusion length in the base. The a and b of the transistor are _____ and ______.

A. a = 0.976, b = 40.7
B. a = 0.976, b = 2
C. a = 1.025, b = 4.1
D. a = 1.025, b = 40.7
Answer» B. a = 0.976, b = 2


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