Consider electron and hole mobilities of germanium at 300 K is 0.36 m2 – McqOptions

MCQOPTIONS

1.	Consider electron and hole mobilities of germanium at 300 K is 0.36 m2/Vs and 0.17 m2/Vs respectively and hole and electron concentration of 2.7 × 1019 per m3. Find the conductivity of germanium at 300 K.
A.	1.4 mho/m
B.	2.3 mho/m
C.	1.3 mho/m
D.	2.0 mho/m
Answer» C. 1.3 mho/m

Discussion

No Comment Found

Related MCQs

In a PNP transistor, due to doping the emitter conductivity is 10 times base conductivity. Electron diffusion length in a more heavily doped emitter is half the hole diffusion length in the base. The base width is one-tenth of the hole diffusion length in the base. The a and b of the transistor are _____ and ______.
In a p-n junction diode at equilibrium, which one of the following statements is NOT TRUE?
If σ = 4.0/m and E = 5.0 V/m, conduction current density is:
Consider electron and hole mobilities of germanium at 300 K is 0.36 m2/Vs and 0.17 m2/Vs respectively and hole and electron concentration of 2.7 × 1019 per m3. Find the conductivity of germanium at 300 K.
An n type silicon that is 1 μm long senses a voltage of 1 V. If the mobility of the electrons μn = 1350 cm2 / V-s the velocity of the electron is:
Charge carriers can move in semiconductor via:
At a temperature of 298 Kelvin, Silicon is not suitable for most electronic applications, due to a small amount of conductivity. This can be altered by
In a long p-type Si-bar with cross-sectional area = 0.5 cm2 and Na = 2 × 1017 cm-3, extra holes = 1016 cm-3 are injected. Assume μp = 500 cm2/Vs, ni = 1010 cm-3 and τp = 10-10 s, find minority carrier lifetime.