In a p-n diode, with the increase reverse bias, the reverse current

1.	In a p-n diode, with the increase reverse bias, the reverse current
A.	Increases
B.	decreases
C.	remain constant
D.	uncertain
Answer» D. uncertain

Discussion

No Comment Found

Related MCQs

What will be the output of the following circuit? (Assume 0.7V drop across the diode)
When the diode is reverse biased with a voltage of 6V and Vbi=0.63V. Calculate the total potential.
What is the maximum electric field when Vbi=2V , VR=5V and width of the semiconductor is 7cm?
If the voltage of the potential barrier is V0. A voltage V is applied to the input, at what moment will the barrier disappear?
A TRAPATT diode has the following parameters:Doping concentration = 2 × 1015cm−3Current density = 20 KA/cm2The avalanche zone velocity of carriers is given by:
In a semiconductor diode, the cut-in voltage is the voltage:
Direction: Given question consists of two statements, one labeled as the 'Assertion (A)' and the other as 'Reason (R)'. You are to examine these two statements carefully and select the answers to these items using the codes given below.Assertion (A): A tunnel diode has an extremely thin depletion layer.Reason (R): Tunneling phenomenon occurs when a very heavily doped junction is reverse biased.
In a p-n diode, with the increase reverse bias, the reverse current
A zener diode, when used in voltage stabilization circuits, is biased in
Match the following:a) Ambipolar Diffusion Constanti) \(\sqrt {\frac{{{\mu _n}{D_n}}}{{{\mu _p}{D_p}}}} \)b) Ambipolar Diffusion Constant of the excess carriersii) \(\frac{{\left( {n + p} \right){D_n}{D_p}}}{{n{D_n} + p{D_p}}}\)c) Diffusion Constant for holesiii) \(\frac{{2{D_n}{D_p}}}{{{D_n} + {D_p}}}\) d) Constant γiv) \(\frac{{{D_a}\left( {1 + \gamma } \right)}}{{2\gamma }}\)Code:

In a p-n diode, with the increase reverse bias, the reverse current

Discussion

No Comment Found

Related MCQs

Reply to Comment