A TRAPATT diode has the following parameters:Doping concentration = 2 × 1015cm−3Current density = 20 KA/cm2The avalanche zone velocity of carriers is given by:

A TRAPATT diode has the following parameters:Doping concentration = 2

1.	A TRAPATT diode has the following parameters:Doping concentration = 2 × 1015cm−3Current density = 20 KA/cm2The avalanche zone velocity of carriers is given by:
A.	2.25 × 105 m/s
B.	6.25×107 cm/s
C.	6.25×103 m/s
D.	2.35×108 m/s
Answer» C. 6.25×103 m/s

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A TRAPATT diode has the following parameters:Doping concentration = 2 × 1015cm−3Current density = 20 KA/cm2The avalanche zone velocity of carriers is given by:

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