Gallium arsenide MESFETs are advantageous than Silicon FETs. – McqOptions

MCQOPTIONS

1.	Gallium arsenide MESFETs are advantageous than Silicon FETs.
A.	True
B.	False
Answer» B. False

Discussion

No Comment Found

Related MCQs

What is usually required by FETs to optimize the figure of merit?
A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________
Which receiver can be fabricated using PIN-FET hybrid approach?
It is difficult to achieve higher transmission rates using conventional __________
PIN-FET hybrid receiver is designed for use at a transmission rate of _____________
The PIN-FET hybrid receivers are a combination of ______________
Gallium arsenide MESFETs are advantageous than Silicon FETs.
The properties of a bipolar transistor are superior to the FET.
IT_IS_DIFFICULT_TO_ACHIEVE_HIGHER_TRANSMISSION_RATES_USING_CONVENTIONAL___________?$
A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________$