For a 0.8- m CMOS fabrication process: Vtn= 0.8 V, Vtp = 0.9 V, nCox = 90 A/V2, pCox = 30 A/V2, Cox = 1.9 fF/ m2, VA (n-channel devices) = 8L ( m), and |VA| (p-channel devices) = 12L ( m). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 m/2 m and operating at ID = 100 A and |VSB| = 1V.

g m = 0.21mA/V, r o = 160 k , g mb = 0.042 mA/V

gm= 0.42mA/V, ro= 160 k , gmb = 0.084 mA/V

gm= 0.21mA/V, ro= 160 k , gmb= 0.042 mA/V

gm= 0.42mA/V, ro= 80 k , gmb = 0.042 mA/V

gm= 0.24mA/V, ro= 80 k , gmb = 0.084 mA/V

For a 0.8- m CMOS fabrication process: Vtn= 0.8 V, Vtp = 0.9 V, nCox

1.	For a 0.8- m CMOS fabrication process: V_tn= 0.8 V, V_tp = 0.9 V, _nC_ox = 90 A/V², _pC_ox= 30 A/V², Cox = 1.9 fF/ m2, V_A (n-channel devices) = 8L ( m), and \|V_A\| (p-channel devices) = 12L ( m). Find the small-signal model parameters (g_m, r_o and g_mb) for an NMOS transistor having W/L = 20 m/2 m and operating at I_D = 100 A and \|V_SB\| = 1V.
A.	g<sub>m</sub>= 0.42mA/V, r<sub>o</sub>= 160 k , g<sub>mb</sub> = 0.084 mA/V
B.	g<sub>m</sub>= 0.21mA/V, r<sub>o</sub>= 160 k , g<sub>mb</sub>= 0.042 mA/V
C.	g<sub>m</sub>= 0.42mA/V, r<sub>o</sub>= 80 k , g<sub>mb</sub> = 0.042 mA/V
D.	g<sub>m</sub>= 0.24mA/V, r<sub>o</sub>= 80 k , g<sub>mb</sub> = 0.084 mA/V
Answer» B. g<sub>m</sub>= 0.21mA/V, r<sub>o</sub>= 160 k , g<sub>mb</sub>= 0.042 mA/V

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