An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. Using a dc supply of 3 V, what values of ID and VOV would you choose?

0.34 mA and 0.35 V respectively

0.34 mA and 0.69 V respectively

0.034 mA and 0.35 V respectively

0.034 mA and 0.69 V respectively

An NMOS amplifier is to be designed to provide a 0.50-V peak output si

1.	An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. Using a dc supply of 3 V, what values of I_D and V_OV would you choose?
A.	0.34 mA and 0.35 V respectively
B.	0.34 mA and 0.69 V respectively
C.	0.034 mA and 0.35 V respectively
D.	0.034 mA and 0.69 V respectively
Answer» E.

Discussion

No Comment Found

Related MCQs

The overdrive voltage at which each device must be operating is
For a 0.8- m CMOS fabrication process: Vtn= 0.8 V, Vtp = 0.9 V, nCox = 90 A/V2, pCox = 30 A/V2, Cox = 1.9 fF/ m2, VA (n-channel devices) = 8L ( m), and |VA| (p-channel devices) = 12L ( m). Find the small-signal model parameters (gm, ro and gmb) for a PMOS transistor having W/L = 20 m/2 m and operating at ID = 100 A and |VSB| = 1V.
For a 0.8- m CMOS fabrication process: Vtn= 0.8 V, Vtp = 0.9 V, nCox = 90 A/V2, pCox = 30 A/V2, Cox = 1.9 fF/ m2, VA (n-channel devices) = 8L ( m), and |VA| (p-channel devices) = 12L ( m). Find the small-signal model parameters (gm, ro and gmb) for an NMOS transistor having W/L = 20 m/2 m and operating at ID = 100 A and |VSB| = 1V.
An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. What W/L ratio is required if nCox = 200 A/V2?
An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. Using a dc supply of 3 V, what values of ID and VOV would you choose?
An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. If a gain of at least 5 V/V is needed, what value of gm is required?
If in a particular application Vgs is 10 mV, find the minimum overdrive voltage at which the transistor should be operated so that the second-harmonic distortion is kept to less than 1%.
We know ID =1/2 kn (VGS + vgs Vt)2. Let the signal vgs be a sine wave with amplitude Vgs, and substitute vgs = Vgs sin t in Eq.(5.43). Using the trigonometric identity show that the ratio of the signal at frequency 2 to that at frequency , expressed as a percentage (known as the second-harmonic distortion) is
Consider an NMOS transistor having kn= 2 mA/V2. Let the transistor be biased at VOV = 1V. For operation in saturation, what dc bias current ID results? If a +0.1-V signal is superimposed on VGS, find the corresponding increment in collector current by evaluating the total collector current ID and subtracting the dc bias current ID.
An NMOS technology has nCox = 50 A/V2 and Vt = 0.7 V. For a transistor with L = 1 m, find the value of W that results in gm 1mA/V at ID = 0.5 mA.

An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. Using a dc supply of 3 V, what values of ID and VOV would you choose?

Discussion

No Comment Found

Related MCQs

Reply to Comment

An NMOS amplifier is to be designed to provide a 0.50-V peak output signal across a 50-k load that can be used as a drain resistor. Using a dc supply of 3 V, what values of I_D and V_OV would you choose?