1.

Consider avalanche breakdown in a silicon \(\rm p^+n\) junction. The n-region is uniformly doped with a donor density \(\rm N_D\). Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field \(\rm E_{crit}\). Assume \(\rm E_{crit}\) to be independent of \(\rm N_D\). If the built-in voltage of the \(\rm p^+n\) junction is much smaller than the breakdown voltage, \(\rm V_{BR}\), the relationship between \(\rm V_{BR}\) and \(\rm N_D\) is given by

A. \({{\rm{V}}_{{\rm{BR}}}} \times \sqrt {{{\rm{N}}_{\rm{D}}}}\) constant
B. \({{\rm{N}}_{\rm{D}}} \times \sqrt {{{\rm{V}}_{{\rm{BR}}}}}\) constant
C. \({{\rm{N}}_{\rm{D}}} \times {{\rm{V}}_{{\rm{BR}}}}\) constant
D. \({{\rm{N}}_{\rm{D}}}/{{\rm{V}}_{{\rm{BR}}}}\) constant
Answer» D. \({{\rm{N}}_{\rm{D}}}/{{\rm{V}}_{{\rm{BR}}}}\) constant


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