Consider a silicon p-n junction at room temperature having the following parameters:Doping on the n-side = 1 x 1017 cm-3Depletion width on the n-side = 0.1 μmDepletion width on the p-side = 1.0 μmIntrinsic carrier concentration = 1.4 x 1014F. cm-1.Thermal voltage = 26mVPermittivity of free space = 8.85 x 10-14F. cm-1.Dielectric constant of silicon = 12. The peak electric field in the device is

• A. 0.15 MV.com-1, directed from p-region to n-region
• B. 0.15 MV.com-1, directed from n-region to p-region
• C. 1.80 MV.com-1, directed from p-region to n-region
• D. 1.80 MV.com-1, directed from n-region to p-region