Consider a silicon p-n junction at room temperature having the following parameters:Doping on the n-side = 1 x 1017 cm-3Depletion width on the n-side = 0.1 μmDepletion width on the p-side = 1.0 μmIntrinsic carrier concentration = 1.4 x 1014F. cm-1.Thermal voltage = 26mVPermittivity of free space = 8.85 x 10-14F. cm-1.Dielectric constant of silicon = 12. A built in potential of the junction.

• A. is 0.70V
• B. is 0.76V
• C. is 0.82V
• D. cannot be estimated from the data given