Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.

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Assertion (A):  Doping level in extrinsic semiconductors is very small.Reason (R):  Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.

TuteeHUB · Accepted Answer

Both A and R are true but R is not correct explanation of A

TuteeHUB · Answer

Both A and R are true and R is correct explanation of A

TuteeHUB · Answer

A is true but R is false

TuteeHUB · Answer

A is false but R is true

1.	Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.
A.	Both A and R are true and R is correct explanation of A
B.	Both A and R are true but R is not correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» B. Both A and R are true but R is not correct explanation of A

Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20.

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