An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity ŒîœÉ obeys which relation? [ Here, e is the electron charge, Œºn electron mobility, Œºp hole mobility, Œîn (Œîp) is the excess electron (hole) density ].

Question

An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity ŒîœÉ obeys which relation?  [ Here, e is the electron charge, Œºn electron mobility, Œºp hole mobility, Œîn (Œîp) is the excess electron (hole) density ].

TuteeHUB · Accepted Answer

ŒîœÉ = e(ŒºnŒîn - ŒºpŒîp)

TuteeHUB · Answer

ŒîœÉ = 0

TuteeHUB · Answer

ŒîœÉ = e(œÉn + œÉp) Œîn

TuteeHUB · Answer

ŒîœÉ = e ŒºnŒîn

1.	An n type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity ŒîœÉ obeys which relation? [ Here, e is the electron charge, Œºn electron mobility, Œºp hole mobility, Œîn (Œîp) is the excess electron (hole) density ].
A.	ŒîœÉ = 0
B.	ŒîœÉ = e(œÉn + œÉp) Œîn
C.	ŒîœÉ = e(ŒºnŒîn - ŒºpŒîp)
D.	ŒîœÉ = e ŒºnŒîn
Answer» C. ŒîœÉ = e(ŒºnŒîn - ŒºpŒîp)

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