According to the tunneling phenomenon of tunnel diode which one of the – McqOptions

MCQOPTIONS

1.	According to the tunneling phenomenon of tunnel diode which one of the following is true?
A.	Width of the junction barrier varies as the square root of impurity concentration.
B.	Width of the junction barrier varies as the impurity concentration.
C.	Width of the junction barrier varies inversely as the square root of impurity concentration.
D.	Width of the junction barrier varies as the cube root of impurity concentration.
Answer» D. Width of the junction barrier varies as the cube root of impurity concentration.

Discussion

No Comment Found

Related MCQs

One of the reasons why vacuum tubes eventually fail at microwave frequencies is that their
According to the tunneling phenomenon of tunnel diode which one of the following is true?
An MOS capacitor with P substrate is in accumulation mode. The dominant change in the channel is due to the presence of ______.
A voltage \(\rm V_G\) is applied across a MOS capacitor with metal gate and p-type silicon substrate at \(\rm T=300 \ K\). The inversion carrier density (in number of carriers per unit area) for \(\rm V_G = 0.8 \ V\) is \(\rm 2 × 10^{11} cm^{−2}\). For \(\rm V_G = 1.3 \ V\), the inversion carrier density is \(\rm 4 × 10^{11} cm^{−2}\). What is the value of the inversion carrier density for \(\rm V_G = 1.8 \ V\)?
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET it will lead to