A voltage \(\rm V_G\) is applied across a MOS capacitor with metal gate and p-type silicon substrate at \(\rm T=300 \ K\). The inversion carrier density (in number of carriers per unit area) for \(\rm V_G = 0.8 \ V\) is \(\rm 2 × 10^{11} cm^{−2}\). For \(\rm V_G = 1.3 \ V\), the inversion carrier density is \(\rm 4 × 10^{11} cm^{−2}\). What is the value of the inversion carrier density for \(\rm V_G = 1.8 \ V\)?

\(\rm 7.2 × 10^{11} cm^{−2}\)

\(\rm 4.5 × 10^{11} cm^{−2}\)

\(\rm 8.4 × 10^{11} cm^{−2}\)

A voltage \(\rm V_G\) is applied across a MOS capacitor with metal ga

1.	A voltage \(\rm V_G\) is applied across a MOS capacitor with metal gate and p-type silicon substrate at \(\rm T=300 \ K\). The inversion carrier density (in number of carriers per unit area) for \(\rm V_G = 0.8 \ V\) is \(\rm 2 × 10^{11} cm^{−2}\). For \(\rm V_G = 1.3 \ V\), the inversion carrier density is \(\rm 4 × 10^{11} cm^{−2}\). What is the value of the inversion carrier density for \(\rm V_G = 1.8 \ V\)?
A.	\(\rm 4.5 × 10^{11} cm^{−2}\)
B.	\(\rm 6 × 10^{11} cm^{−2}\)
C.	\(\rm 7.2 × 10^{11} cm^{−2}\)
D.	\(\rm 8.4 × 10^{11} cm^{−2}\)
Answer» C. \(\rm 7.2 × 10^{11} cm^{−2}\)