1.

A sample of N type semiconductor has an electron density of 6.25 x 1018/cm3 at 300 K. If intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature, the hole density is

A. 1010 / cm3
B. 1012 / cm3
C. Both A and R are true and R is correct explanation of A
D. Both A and R are true but R is not correct explanation of A
Answer» C. Both A and R are true and R is correct explanation of A


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