A n-type silicon sample contains a donor concentration of Nd = 2 x 101 – McqOptions

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1.	A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is tp0 = 5 Œºs. The thermal equilibrium generation rate of hole is:
A.	1.125 x 109 cm-3 s-1
B.	0.625 x 109 cm-3 s-1
C.	4.5 x 109 cm-3 s-1
D.	2.25 x 109 cm-3 s-1
Answer» E.

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