MCQOPTIONS
Saved Bookmarks
| 1. |
A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ . |
| A. | 8.6 x 1011/cm2, p-type |
| B. | 8.6 x 1011/cm2, n-type |
| C. | 0.86 x 109/cm2, p-type |
| D. | 1.02 x 1012/cm2, n-type |
| Answer» B. 8.6 x 1011/cm2, n-type | |