Explore topic-wise MCQs in Optical Communication.

This section includes 29 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communication knowledge and support exam preparation. Choose a topic below to get started.

1.

QD lasers have a very low threshold current densities of range __________

A. 0.5 to 5 A cm-2
B. 2 to 10 A cm-2
C. 10 to 30 A cm-2
D. 6 to 20 A cm-2
Answer» E.
Discussion
2.

A BH can have anything from a single electron to several electrons.

A. True
B. False
Answer» C.
Discussion
3.

Dot-in-well device is also known as __________

A. DH lasers
B. BH lasers
C. QD lasers
D. Gain guided lasers
Answer» D. Gain guided lasers
Discussion
4.

Multi-quantum devices have superior characteristics over __________

A. BH lasers
B. DH lasers
C. Gain guided lasers
D. Single-quantum-well devices
Answer» C. Gain guided lasers
Discussion
5.

Better confinement of optical mode is obtained in __________

A. Multi Quantum well lasers
B. Single Quantum well lasers
C. Gain guided lasers
D. BH lasers
Answer» B. Single Quantum well lasers
Discussion
6.

Strip geometry of a device or laser is important.

A. True
B. False
Answer» B. False
Discussion
7.

Quantum well lasers are providing high inherent advantage over __________

A. Chemical lasers
B. Gas lasers
C. Conventional DH devices
D. BH device
Answer» D. BH device
Discussion
8.

Quantum well lasers are also known as __________

A. BH lasers
B. DH lasers
C. Chemical lasers
D. Gain-guided lasers
Answer» C. Chemical lasers
Discussion
9.

Problems resulting from parasitic capacitances can be overcome __________

A. Through regrowth of semi-insulating material
B. By using oxide material
C. By using a planar InGaAsP active region
D. By using a AlGaAs active region
Answer» B. By using oxide material
Discussion
10.

A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is?

A. Alga AS
B. InGaAsP
C. GaAs
D. SiO2
Answer» C. GaAs
Discussion
11.

In Buried hetero-junction (BH) lasers, the optical field is confined within __________

A. Transverse direction
B. Lateral direction
C. Outside the strip
D. Both transverse and lateral direction
Answer» E.
Discussion
12.

Some refractive index variation is introduced into lateral structure of laser.

A. True
B. False
Answer» B. False
Discussion
13.

What is the strip width of injection laser?

A. 12 μm
B. 11.5 μm
C. Less than 10 μm
D. 15 μm
Answer» D. 15 μm
Discussion
14.

In multimode injection lasers, the construction of current flow to the strip is obtained in structure by __________

A. Covering the strip with ceramic
B. Intrinsic doping
C. Implantation outside strip region with protons
D. Implantation outside strip region with electrons
Answer» D. Implantation outside strip region with electrons
Discussion
15.

QUANTUM_WELL_LASERS_ARE_PROVIDING_HIGH_INHERENT_ADVANTAGE_OVER?$

A. Chemical lasers.
B. Gas lasers.
C. Conventional DH devices.
D. BH device.
Answer» D. BH device.
Discussion
16.

Better confinement of optical mode is obtained in$

A. Multi Quantum well lasers.
B. Single Quantum well lasers.
C. Gain guided lasers.
D. BH lasers.
Answer» B. Single Quantum well lasers.
Discussion
17.

Strip_geometry_of_a_device_or_laser_is_important._State_whether_the_given_statement_is_true_or_false.$

A. True
B. False
Answer» B. False
Discussion
18.

QD lasers have a very low threshold current densities of range

A. 0.5 to 5 A cm<sup>-2</sup>
B. 2 to 10 A cm<sup>-2</sup>
C. 10 to 30 A cm<sup>-2</sup>
D. 6 to 20 A cm<sup>-2</sup>
Answer» E.
Discussion
19.

A BH can have anything from a single electron to several electrons. State whether the given statement is true or false.

A. True
B. False
Answer» C.
Discussion
20.

Dot-in-well device is also known as

A. DH lasers.
B. BH lasers.
C. QD lasers.
D. Gain guided lasers.
Answer» D. Gain guided lasers.
Discussion
21.

Multi-quantum_devices_have_superior_characteristics_over

A. BH lasers.
B. DH lasers.
C. Gain guided lasers.
D. Single-quantum-well devices.
Answer» C. Gain guided lasers.
Discussion
22.

Quantum well lasers are also known a?

A. BH lasers.
B. DH lasers.
C. Chemical lasers.
D. Gain-guided lasers.
Answer» C. Chemical lasers.
Discussion
23.

Problems resulting from parasitic capacitances can be overcome

A. Through regrowth of semi-insulating material.
B. By using oxide material.
C. By using a planar InGaAsP active region.
D. By using a AlGaAs active region.
Answer» B. By using oxide material.
Discussion
24.

A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is

A. Alga AS
B. InGaAsP
C. GaAs
D. SiO<sub>2</sub>
Answer» C. GaAs
Discussion
25.

In Buried hetero-junction (BH) lasers, the optical field is confined within

A. Transverse direction.
B. Lateral direction.
C. Outside the strip.
D. Both transverse and lateral direction.
Answer» E.
Discussion
26.

Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.

A. Gas lasers.
B. Gain guided lasers.
C. Weak index guiding lasers.
D. Strong index guiding lasers.
Answer» E.
Discussion
27.

Some refractive index variation is introduced into lateral structure of laser. State whether the given statement is true or false.

A. True
B. False
Answer» B. False
Discussion
28.

The strip width of injection laser is

A. 12 μm
B. 11.5 μm
C. Less than 10 μm
D. 15 μm
Answer» D. 15 ‚âà√≠¬¨‚à´m
Discussion
29.

In multimode injection lasers, the construction of current flow to the strip is obtained in structure by

A. Covering the strip with ceramic.
B. Intrinsic doping.
C. Implantation outside strip region with protons.
D. Implantation outside strip region with electrons.
Answer» D. Implantation outside strip region with electrons.
Discussion