MCQOPTIONS
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MCQOPTIONS
This section includes 39 Mcqs, each offering curated multiple-choice questions to sharpen your Active Filter Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The ideal model of a diode is a switch. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 2. |
The movement of free electrons in a semiconductor material is termed electron voltage. |
| A. | True |
| B. | False |
| Answer» C. | |
| 3. |
Forward bias is the condition that allows current through a pn junction. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 4. |
An intrinsic semiconductor is neither a good conductor nor a good insulator. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 5. |
A reverse-biased silicon diode has about 0.7 V across it. |
| A. | True |
| B. | False |
| Answer» C. | |
| 6. |
An intrinsic crystal is one that contains a small amount of impurities. |
| A. | True |
| B. | False |
| Answer» C. | |
| 7. |
N-type semiconductor material has very few free electrons. |
| A. | True |
| B. | False |
| Answer» C. | |
| 8. |
An atom is the smallest particle of an element that retains the characteristics of that element. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 9. |
The silicon material used in semiconductors is extremely pure with no additives. |
| A. | True |
| B. | False |
| Answer» C. | |
| 10. |
A pn structure is called a diode. |
| A. | True |
| B. | False |
| Answer» B. False | |
| 11. |
What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band? |
| A. | doping |
| B. | recombination |
| C. | generation |
| D. | - |
| Answer» C. generation | |
| 12. |
Doping of a semiconductor material means |
| A. | that a glue-type substance is added to hold the material together. |
| B. | that impurities are added to increase the resistance of the material. |
| C. | that impurities are added to decrease the resistance of the material. |
| D. | that all impurities are removed to get pure silicon. |
| Answer» D. that all impurities are removed to get pure silicon. | |
| 13. |
The term bias in electronics usually means |
| A. | the value of ac voltage in the signal. |
| B. | the condition of current through a pn junction. |
| C. | the value of dc voltages for the device to operate properly. |
| D. | the status of the diode. |
| Answer» D. the status of the diode. | |
| 14. |
A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________. |
| A. | 0 V, 0.3 V |
| B. | 2.3 V, 1.6 V |
| C. | 1.6 V, 2.3 V |
| D. | 0.3 V, 0 V |
| Answer» C. 1.6 V, 2.3 V | |
| 15. |
The maximum number of electrons in each shell of an atom is |
| A. | 2. |
| B. | 2n 2 where n is the number of the shell. |
| C. | 4. |
| D. | 8. |
| Answer» C. 4. | |
| 16. |
The most common type of diode failure is a(n) ________. |
| A. | open |
| B. | short |
| C. | resistive |
| D. | - |
| Answer» B. short | |
| 17. |
The forward voltage across a conducting silicon diode is about |
| A. | 0.3 V. |
| B. | 1.7 V. |
| C. | –0.7 V. |
| D. | 0.7 V. |
| Answer» E. | |
| 18. |
As the forward current through a silicon diode increases, the voltage across the diode |
| A. | increases to a 0.7 V maximum. |
| B. | decreases. |
| C. | is relatively constant. |
| D. | decreases and then increases. |
| Answer» D. decreases and then increases. | |
| 19. |
There is a small amount of current across the barrier of a reverse-biased diode. This current is called |
| A. | forward-bias current. |
| B. | reverse breakdown current. |
| C. | conventional current. |
| D. | reverse leakage current. |
| Answer» E. | |
| 20. |
Reverse breakdown is a condition in which a diode |
| A. | is subjected to a large reverse voltage. |
| B. | is reverse-biased and there is a small leakage current. |
| C. | has no current flowing at all. |
| D. | is heated up by large amounts of current in the forward direction. |
| Answer» B. is reverse-biased and there is a small leakage current. | |
| 21. |
An atom is made up of |
| A. | protons. |
| B. | neutrons. |
| C. | electrons. |
| D. | all of the above |
| Answer» E. | |
| 22. |
What factor(s) do(es) the barrier potential of a pn junction depend on? |
| A. | type of semiconductive material |
| B. | the amount of doping |
| C. | the temperature |
| D. | all of the above |
| Answer» E. | |
| 23. |
What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon? |
| A. | bivalent |
| B. | octavalent |
| C. | pentavalent |
| D. | trivalent |
| Answer» D. trivalent | |
| 24. |
A reverse-biased diode has the ________ connected to the positive side of the source, and the ________ connected to the negative side of the source. |
| A. | cathode, anode |
| B. | cathode, base |
| C. | base, anode |
| D. | anode, cathode |
| Answer» B. cathode, base | |
| 25. |
An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased. |
| A. | open, short |
| B. | short, open |
| C. | open, open |
| D. | short, short |
| Answer» B. short, open | |
| 26. |
You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be |
| A. | a silicon diode. |
| B. | a germanium diode. |
| C. | a forward-biased silicon diode. |
| D. | a reverse-biased germanium diode. |
| Answer» C. a forward-biased silicon diode. | |
| 27. |
The boundary between p-type material and n-type material is called |
| A. | a diode. |
| B. | a reverse-biased diode. |
| C. | a pn junction. |
| D. | a forward-biased diode. |
| Answer» D. a forward-biased diode. | |
| 28. |
Effectively, how many valence electrons are there in each atom within a silicon crystal? |
| A. | 2 |
| B. | 4 |
| C. | 8 |
| D. | 16 |
| Answer» D. 16 | |
| 29. |
Which statement best describes an insulator? |
| A. | A material with many free electrons. |
| B. | A material doped to have some free electrons. |
| C. | A material with few free electrons. |
| D. | No description fits. |
| Answer» D. No description fits. | |
| 30. |
For a forward-biased diode, as temperature is ________, the forward current ________ for a given value of forward voltage. |
| A. | decreased, increases |
| B. | increased, increases |
| C. | increased, decreases |
| D. | decreased, decreases |
| Answer» C. increased, decreases | |
| 31. |
An n-type semiconductor material |
| A. | is intrinsic. |
| B. | has trivalent impurity atoms added. |
| C. | has pentavalent impurity atoms added. |
| D. | requires no doping. |
| Answer» D. requires no doping. | |
| 32. |
The wide end arrow on a schematic indicates the ________ of a diode. |
| A. | ground |
| B. | direction of electron flow |
| C. | cathode |
| D. | anode |
| Answer» E. | |
| 33. |
The movement of free electrons in a conductor is called |
| A. | voltage. |
| B. | current. |
| C. | recombination. |
| D. | equilibrium. |
| Answer» C. recombination. | |
| 34. |
For a forward-biased diode, the barrier potential ________ as temperature increases. |
| A. | decreases |
| B. | remains constant |
| C. | increases |
| D. | - |
| Answer» B. remains constant | |
| 35. |
As the forward current through a silicon diode increases, the internal resistance |
| A. | increases. |
| B. | decreases. |
| C. | remains the same. |
| D. | - |
| Answer» C. remains the same. | |
| 36. |
Single-element semiconductors are characterized by atoms with ____ valence electrons. |
| A. | 3 |
| B. | 4 |
| C. | 5 |
| D. | 2 |
| Answer» C. 5 | |
| 37. |
Under normal conditions a diode conducts current when it is |
| A. | reverse-biased. |
| B. | forward-biased. |
| C. | avalanched. |
| D. | saturated. |
| Answer» C. avalanched. | |
| 38. |
A diode conducts when it is forward-biased, and the anode is connected to the ________ through a limiting resistor. |
| A. | positive supply |
| B. | negative supply |
| C. | cathode |
| D. | anode |
| Answer» B. negative supply | |
| 39. |
A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is |
| A. | the diode is open. |
| B. | the diode is shorted to ground. |
| C. | the diode is internally shorted. |
| D. | the diode is working correctly. |
| Answer» D. the diode is working correctly. | |