MCQOPTIONS
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MCQOPTIONS
This section includes 40 Mcqs, each offering curated multiple-choice questions to sharpen your Electronics knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
The natural elements carbon, germanium, and silicon are semiconductors. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 2. |
The P-N junction is a barrier to electron flow. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 3. |
The number of electrons in the outer shell of carbon, germanium, and silicon is 5. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 4. |
Germanium is the most widely used semiconductor material because of its stability at high temperatures. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 5. |
A commonly used pentavalent material is: |
| A. | arsenic |
| B. | boron |
| C. | gallium |
| D. | neon |
| Answer» B. boron | |
| 6. |
What is a type of doping material? |
| A. | extrinsic semiconductor material |
| B. | pentavalent material |
| C. | n-type semiconductor |
| D. | majority carriers |
| Answer» C. n-type semiconductor | |
| 7. |
Elements with 1, 2, or 3 valence electrons usually make excellent: |
| A. | conductors |
| B. | semiconductors |
| C. | insulators |
| D. | neutral |
| Answer» B. semiconductors | |
| 8. |
The first transistor was invented in 1938. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» C. 1 | |
| 9. |
The first integrated circuit was invented in 1959. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 10. |
If conductance increases as temperature increases, this is known as a: |
| A. | positive coefficient |
| B. | negative current flow |
| C. | negative coefficient |
| D. | positive resistance |
| Answer» D. positive resistance | |
| 11. |
When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called? |
| A. | energy gap |
| B. | hole |
| C. | electron-hole pair |
| D. | recombination |
| Answer» C. electron-hole pair | |
| 12. |
In "n" type material, majority carriers would be: |
| A. | holes |
| B. | dopants |
| C. | slower |
| D. | electrons |
| Answer» E. | |
| 13. |
What can a semiconductor sense? |
| A. | magnetism |
| B. | temperature |
| C. | pressure |
| D. | all of the above |
| Answer» E. | |
| 14. |
What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities? |
| A. | conductivity |
| B. | resistance |
| C. | power |
| D. | all of the above |
| Answer» B. resistance | |
| 15. |
Which semiconductor material is made from coal ash? |
| A. | germanium |
| B. | silicon |
| C. | tin |
| D. | carbon |
| Answer» B. silicon | |
| 16. |
When a voltage is placed across a semiconductor, free electrons move toward the negative voltage. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 17. |
What is the voltage across R1 if the P-N junction is made of silicon? |
| A. | 12 V |
| B. | 11.7 V |
| C. | 11.3 V |
| D. | 0 V |
| Answer» D. 0 V | |
| 18. |
A P-N junction mimics a closed switch when it: |
| A. | has a low junction resistance |
| B. | is reverse biased |
| C. | cannot overcome its barrier voltage |
| D. | has a wide depletion region |
| Answer» B. is reverse biased | |
| 19. |
Solid state devices were first manufactured during: |
| A. | World War 2 |
| B. | 1904 |
| C. | 1907 |
| D. | 1960 |
| Answer» E. | |
| 20. |
A covalent bond is when atoms lose valence shell electrons. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 21. |
Electron pair bonding occurs when atoms: |
| A. | lack electrons |
| B. | share holes |
| C. | lack holes |
| D. | share electrons |
| Answer» E. | |
| 22. |
Minority carriers are many times activated by: |
| A. | heat |
| B. | pressure |
| C. | dopants |
| D. | forward bias |
| Answer» B. pressure | |
| 23. |
When is a P-N junction formed? |
| A. | in a depletion region |
| B. | in a large reverse biased region |
| C. | the point at which two opposite doped materials come together |
| D. | whenever there is a forward voltage drop |
| Answer» D. whenever there is a forward voltage drop | |
| 24. |
When a depletion region of a transistor is large the barrier voltage is also large. |
| A. | 1 |
| B. | |
| Answer» B. | |
| 25. |
Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts? |
| A. | 0.2 |
| B. | 0.3 |
| C. | 0.7 |
| D. | 0.8 |
| Answer» D. 0.8 | |
| 26. |
Which material may also be considered a semiconductor element? |
| A. | carbon |
| B. | ceramic |
| C. | mica |
| D. | argon |
| Answer» B. ceramic | |
| 27. |
The n-type semiconductor material is doped by adding material with electron holes. |
| A. | 1 |
| B. | |
| Answer» C. | |
| 28. |
Atoms that normally have three electrons in their outer shell are called __________________ atoms. |
| A. | trivalent |
| B. | pentavalent |
| C. | tetravalent |
| D. | charged |
| Answer» B. pentavalent | |
| 29. |
Ionization within a P-N junction causes a layer on each side of the barrier called the: |
| A. | junction |
| B. | depletion region |
| C. | barrier voltage |
| D. | forward voltage |
| Answer» C. barrier voltage | |
| 30. |
When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material: |
| A. | 1949, William Schockley |
| B. | 1955, Walter Bratten |
| C. | 1959, Robert Noyce |
| D. | 1960, John Bardeen |
| Answer» D. 1960, John Bardeen | |
| 31. |
What causes the depletion region? |
| A. | doping |
| B. | diffusion |
| C. | barrier potential |
| D. | ions |
| Answer» C. barrier potential | |
| 32. |
In "p" type material, minority carriers would be: |
| A. | holes |
| B. | dopants |
| C. | slower |
| D. | electrons |
| Answer» E. | |
| 33. |
The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V. |
| A. | 1 |
| B. | |
| C. | 1 |
| D. | |
| Answer» C. 1 | |
| 34. |
Reverse bias is a condition that essentially ___________ current through the diode. |
| A. | allows |
| B. | prevents |
| C. | increases |
| D. | blocks |
| Answer» C. increases | |
| 35. |
What is an energy gap? |
| A. | the space between two orbital shells |
| B. | the energy equal to the energy acquired by an electron passing a 1 V electric field |
| C. | the energy band in which electrons can move freely |
| D. | an energy level at which an electron can exist |
| Answer» B. the energy equal to the energy acquired by an electron passing a 1 V electric field | |
| 36. |
Silicon atoms combine into an orderly pattern called a: |
| A. | covalent bond |
| B. | crystal |
| C. | semiconductor |
| D. | valence orbit |
| Answer» C. semiconductor | |
| 37. |
Which of the following cannot actually move? |
| A. | majority carriers |
| B. | ions |
| C. | holes |
| D. | free electrons |
| Answer» C. holes | |
| 38. |
What is the most significant development in electronics since World War II? |
| A. | the development of color TV |
| B. | the development of the diode |
| C. | the development of the transistor |
| D. | the development of the TRIAC |
| Answer» D. the development of the TRIAC | |
| 39. |
How many valence electrons are in every semiconductor material? |
| A. | 1 |
| B. | 2 |
| C. | 3 |
| D. | 4 |
| Answer» E. | |
| 40. |
Intrinsic semiconductor material is characterized by a valence shell of how many electrons? |
| A. | 1 |
| B. | 2 |
| C. | 4 |
| D. | 6 |
| Answer» D. 6 | |